화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Sn doped GaSb grown by liquid phase epitaxy
Compean-Jasso VH, de Anda F, Mishurnyi VA, Gorbatchev AY, Prutskij T, Kudriavtsev Y
Thin Solid Films, 548, 168, 2013
2 Influence of the GaAs substrate orientation on the composition of GaxIn1-xP (x approximate to 0.5) grown by LPE and MOCVD
Mishumyi VA, de Anda F, Gorbatchev AY, Kudriavtsev Y, Elyukhin VA, Prutskij T, Pelosi C, Bocchi C, Ber BY, Vazquez FEO
Thin Solid Films, 516(22), 8092, 2008
3 Polarization anisotropy in the photoluminescence from InGaP layers grown by liquid phase epitaxy
Prutskij T, Diaz-Arencibia P, Brito-Orta RA, Mintairov A, Kosel T, Merz J
Applied Surface Science, 234(1-4), 462, 2004