검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Study on ion implantation conditions in fabricating compressively strained Si/relaxed Si1-xCx heterostructures using the defect control by ion implantation technique Arisawa Y, Sawano K, Usami N Journal of Crystal Growth, 468, 601, 2017 |
| 2 |
Hole mobility in strained Si/SiGe/vicinal Si(110) grown by gas source MBE Arimoto K, Yagi S, Yamanaka J, Hara KO, Sawano K, Usami N, Nakagawa K Journal of Crystal Growth, 468, 625, 2017 |
| 3 |
Formation of compressively strained Si/S1-xCx/Si(100) heterostructures using gas-source molecular beam epitaxy Arimoto K, Furukawa H, Yamanaka J, Yamamoto C, Nakagawa K, Usami N, Sawano K, Shiraki Y Journal of Crystal Growth, 362, 276, 2013 |
| 4 |
Formation of compressively strained SiGe/Si(110) heterostructures and their characterization Arimoto K, Obata T, Furukawa H, Yamanaka J, Nakagawa K, Sawano K, Shiraki Y Journal of Crystal Growth, 362, 282, 2013 |
| 5 |
Gas-source MBE growth of strain-relaxed Si1-xCx on Si(100) substrates Arimoto K, Sakai S, Furukawa H, Yamanaka J, Nakagawa K, Usami N, Hoshi Y, Sawano K, Shiraki Y Journal of Crystal Growth, 378, 212, 2013 |
| 6 |
Crystalline morphologies of step-graded SiGe layers grown on exact and vicinal (110) Si substrates Arimoto K, Watanabe M, Yamanaka J, Nakagawa K, Sawano K, Shiraki Y, Usami N, Nakajima K Journal of Crystal Growth, 311(3), 809, 2009 |
| 7 |
Structural and transport properties of strained SiGe grown on V-groove patterned Si(110) substrates Arimoto K, Kawaguchi G, Shimizu K, Watanabe M, Yamanaka J, Nakagawa K, Usami N, Nakajima K, Sawano K, Shiraki Y Journal of Crystal Growth, 311(3), 814, 2009 |
| 8 |
Strain relaxation mechanisms in step-graded SiGe/Si(110) heterostructures grown by gas-source MBE at high temperatures Arimoto K, Watanabe M, Yamanaka J, Nakagawa K, Usami N, Nakajima K, Sawano K, Shiraki Y Journal of Crystal Growth, 311(3), 819, 2009 |