화학공학소재연구정보센터
검색결과 : 11건
No. Article
1 Optical in-situ monitoring system for simultaneous measurement of thickness and curvature of thick layer stacks during hydride vapor phase epitaxy growth of GaN
Semmelroth K, Berwian P, Schroter C, Leibiger G, Schonleber M, Friedrich J
Journal of Crystal Growth, 427, 99, 2015
2 Growth of cubic SiC single crystals by the physical vapor transport technique
Semmelroth K, Krieger M, Pensl G, Nagasawa H, Puesche R, Hundhausen M, Ley L, Nerding M, Strunk HP
Journal of Crystal Growth, 308(2), 241, 2007
3 Concentration of N and P in SIC investigated by time-of-flight secondary ion mass spectrometry (TOF-SIMS)
Acarturk T, Semmelroth K, Pensl G, Saddow SE, Starke U
Materials Science Forum, 483, 453, 2005
4 Microstructure of cubic SiC grown by the modified Lely-method
Nerding M, Semmelroth K, Pensl G, Nagasawa H, Strunk HP
Materials Science Forum, 457-460, 147, 2004
5 Growth of 3C-SiC bulk material by the modified Lely method
Semmelroth K, Krieger M, Pensl G, Nagasawa H, Pusche R, Hundhausen M, Ley L, Nerding M, Strunk HP
Materials Science Forum, 457-460, 151, 2004
6 Study of the temperature induced polytype conversion in cubic CVD SiC by Raman spectroscopy
Pusche R, Hundhausen M, Ley L, Semmelroth K, Schmid F, Pensl G, Nagasawa H
Materials Science Forum, 457-460, 617, 2004
7 Impurity conduction observed in Al-doped 6H-SIC
Krieger M, Semmelroth K, Pensl G
Materials Science Forum, 457-460, 685, 2004
8 Experimental determination of the phonon-eigenvectors of silicon carbide by Raman spectroscopy
Herzog B, Rohmfeld S, Pusche R, Hundhausen M, Ley L, Semmelroth K, Pensl G
Materials Science Forum, 389-3, 625, 2002
9 Growth of phosphorus-doped 6H-SiC single crystals by the modified Lely method
Semmelroth K, Schmid F, Karg D, Pensl G, Maier M, Greulich-Weber S, Spaeth JM
Materials Science Forum, 433-4, 63, 2002
10 Electrical and optical characterization of SiC
Pensl G, Schmid F, Ciobanu F, Laube M, Reshanov SA, Schulze N, Semmelroth K, Nagasawa H, Schoner A, Wagner G
Materials Science Forum, 433-4, 365, 2002