검색결과 : 11건
No. | Article |
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1 |
Optical in-situ monitoring system for simultaneous measurement of thickness and curvature of thick layer stacks during hydride vapor phase epitaxy growth of GaN Semmelroth K, Berwian P, Schroter C, Leibiger G, Schonleber M, Friedrich J Journal of Crystal Growth, 427, 99, 2015 |
2 |
Growth of cubic SiC single crystals by the physical vapor transport technique Semmelroth K, Krieger M, Pensl G, Nagasawa H, Puesche R, Hundhausen M, Ley L, Nerding M, Strunk HP Journal of Crystal Growth, 308(2), 241, 2007 |
3 |
Concentration of N and P in SIC investigated by time-of-flight secondary ion mass spectrometry (TOF-SIMS) Acarturk T, Semmelroth K, Pensl G, Saddow SE, Starke U Materials Science Forum, 483, 453, 2005 |
4 |
Microstructure of cubic SiC grown by the modified Lely-method Nerding M, Semmelroth K, Pensl G, Nagasawa H, Strunk HP Materials Science Forum, 457-460, 147, 2004 |
5 |
Growth of 3C-SiC bulk material by the modified Lely method Semmelroth K, Krieger M, Pensl G, Nagasawa H, Pusche R, Hundhausen M, Ley L, Nerding M, Strunk HP Materials Science Forum, 457-460, 151, 2004 |
6 |
Study of the temperature induced polytype conversion in cubic CVD SiC by Raman spectroscopy Pusche R, Hundhausen M, Ley L, Semmelroth K, Schmid F, Pensl G, Nagasawa H Materials Science Forum, 457-460, 617, 2004 |
7 |
Impurity conduction observed in Al-doped 6H-SIC Krieger M, Semmelroth K, Pensl G Materials Science Forum, 457-460, 685, 2004 |
8 |
Experimental determination of the phonon-eigenvectors of silicon carbide by Raman spectroscopy Herzog B, Rohmfeld S, Pusche R, Hundhausen M, Ley L, Semmelroth K, Pensl G Materials Science Forum, 389-3, 625, 2002 |
9 |
Growth of phosphorus-doped 6H-SiC single crystals by the modified Lely method Semmelroth K, Schmid F, Karg D, Pensl G, Maier M, Greulich-Weber S, Spaeth JM Materials Science Forum, 433-4, 63, 2002 |
10 |
Electrical and optical characterization of SiC Pensl G, Schmid F, Ciobanu F, Laube M, Reshanov SA, Schulze N, Semmelroth K, Nagasawa H, Schoner A, Wagner G Materials Science Forum, 433-4, 365, 2002 |