| 1 |
Investigating the effect of varying coating thickness on the surface roughness and adhesion forces of MEMS surfaces utilizing a theoretical and experimental approach
Kolahdoozan M, Kiani A, Heidari P, Oveissi S
Applied Surface Science, 481, 531, 2019 |
| 2 |
Magnetoelectric composite films of La0.67Sr0.33MnO3 and Fe-substituted Bi4Ti3O12 fabricated by chemical solution deposition
Duan ZF, Fu X, Yang Z, Mei Y, Cui J, Jia JQ, Ma L, You CY, Zhao GY
Applied Surface Science, 491, 225, 2019 |
| 3 |
Advantage of heteroepitaxial GaSb thin-film buffer and GaSb dot nucleation layer for GaSb/AlGaSb multiple quantum well structure grown on Si(100) substrate by molecular beam epitaxy
Machida R, Akahane K, Watanabe I, Hara S, Fujikawa S, Kasamatsu A, Fujishiro HI
Journal of Crystal Growth, 507, 357, 2019 |
| 4 |
Structural, electrical, and optical properties of annealed InN films grown on sapphire and silicon substrates
Michal K, Adam A, Edmund D, Robert K, Milan T, Agata L, Alexandros G, Jan K
Thin Solid Films, 672, 114, 2019 |
| 5 |
Effect of substrate bias voltage on tensile properties of single crystal silicon microstructure fully coated with plasma CVD diamond-like carbon film
Zhang WL, Hirai Y, Tsuchiya T, Tabata O
Applied Surface Science, 443, 48, 2018 |
| 6 |
Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition
Cerba T, Martin M, Moeyaert J, David S, Rouviere JL, Cerutti L, Alcotte R, Rodriguez JB, Bawedin M, Boutry H, Bassani F, Bogumilowicz Y, Gergaud P, Tournie E, Baron T
Thin Solid Films, 645, 5, 2018 |
| 7 |
Characterization of antimonide based material grown by molecular epitaxy on vicinal silicon substrates via a low temperature AlSb nucleation layer
Rodriguez JB, Cerutti L, Patriarche G, Largeau L, Madiomanana K, Tournie E
Journal of Crystal Growth, 477, 65, 2017 |
| 8 |
Method for Al thin film surface nanostructuring using Al imprinting and anodic oxidation: Application to a high capacitance density metal-insulator-metal capacitor
Hourdakis E, Nassiopoulou AG
Thin Solid Films, 621, 36, 2017 |
| 9 |
Growth of aluminum nitride on flat and patterned Si (111) by high temperature halide CVD
Chubarov M, Mercier F, Lay S, Charlot F, Crisci A, Coindeau S, Encinas T, Ferro G, Reboud R, Boichot R
Thin Solid Films, 623, 65, 2017 |
| 10 |
X-ray diffraction study of GaSb grown by molecular beam epitaxy on silicon substrates
Rodriguez JB, Madiomanana K, Cerutti L, Castellano A, Tournie E
Journal of Crystal Growth, 439, 33, 2016 |
