화학공학소재연구정보센터
검색결과 : 12건
No. Article
1 Changes in thermal conductivity and bandgap of SiC single crystals in accordance with thermal stress
Kim JG, Kim YH, Lee KM, Sohn HC, Choi DJ
Thermochimica Acta, 542, 6, 2012
2 Effects of Ag doping on the crystallization properties of Sb-rich GeSb thin films
Kim NH, Kim HK, Lee KM, Sohn HC, Roh JS, Choi DJ
Thin Solid Films, 519(16), 5323, 2011
3 Physical and electrical characteristics of band-engineered Zr-silicate/SiO2 stacks for tunnel barrier
Kang HY, Heo MY, Sohn HC
Current Applied Physics, 10(1), E22, 2010
4 The Effects of Postannealing Treatment in Forming Gas on Low-k SiOC(H) Film
Park SH, Kim HJ, Cho MH, Ko DH, Sohn HC, Hahn JH, Lee DH, Kwon YS, Park SY, Kim MS
Journal of the Electrochemical Society, 157(8), G183, 2010
5 Effect of Bonding Characteristics on the Instability of GexSb1-x Films
Park SJ, Jang MH, Park SJ, Cho MH, Kim JK, Ko DH, Sohn HC
Journal of the Electrochemical Society, 157(12), II1078, 2010
6 Behavior of strain at a thin Ge pile-up layer formed by dry oxidation of a Si0.7Ge0.3 film
Min BG, Yoo JH, Sohn HC, Ko DH, Cho MH, Chung KB, Lee TW
Thin Solid Films, 518(8), 2065, 2010
7 Strain behaviors of Si1-xGex grown on oxidized and etched Si1-xGex
Min BG, Yoo JH, Sohn HC, Ko DH, Cho MH, Lee TW
Electrochemical and Solid State Letters, 11(4), H96, 2008
8 Characteristics of the nanoscale titanium film deposited by plasma enhanced chemical vapor deposition and comparison of the film properties with the film by physical vapor deposition
Lee JW, Kim SH, Kwak NJ, Lee YJ, Sohn HC, Kim JW, Sun HJ
Journal of Vacuum Science & Technology B, 24(3), 1460, 2006
9 Electrical properties in high-k HfO2 capacitors with an equivalent oxide thickness of 9 angstrom on Ru metal electrode
Kim JH, Yoon SG, Yeom SJ, Woo HK, Kil DS, Roh JS, Sohn HC
Electrochemical and Solid State Letters, 8(6), F17, 2005
10 High-k nanomixed HfxAlyOz film capacitors grown on Ru metal electrodes by atomic layer deposition
Seong NJ, Yoon SG, Yeom SJ, Woo HK, Kil DS, Roh JS, Sohn HC
Electrochemical and Solid State Letters, 8(10), F40, 2005