화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Sharp-switching band-modulation back-gated devices in advanced FDSOI technology
El Dirani H, Fonteneau P, Solaro Y, Legrand CA, Marin-Cudraz D, Ferrari P, Cristoloveanu S
Solid-State Electronics, 128, 180, 2017
2 Properties and mechanisms of Z(2)-FET at variable temperature
El Dirani H, Solaro Y, Fonteneau P, Ferrari P, Cristoloveanu S
Solid-State Electronics, 115, 201, 2016
3 A sharp-switching device with free surface and buried gates based on band modulation and feedback mechanisms
Solaro Y, Fonteneau P, Legrand CA, Fenouillet-Beranger C, Ferrari P, Cristoloveanu S
Solid-State Electronics, 116, 8, 2016
4 A band-modulation device in advanced FDSOI technology: Sharp switching characteristics
El Dirani H, Solaro Y, Fonteneau P, Legrand CA, Marin-Cudraz D, Golanski D, Ferrari P, Cristoloveanu S
Solid-State Electronics, 125, 103, 2016
5 Z(2)-FET: A promising FDSOI device for ESD protection
Solaro Y, Wan J, Fonteneau P, Fenouillet-Beranger C, Le Royer B, Zaslavsky A, Ferrari P, Cristoloveanu S
Solid-State Electronics, 97, 23, 2014