| 1 |
Forming aluminum electrodes by screen printing and electron-beam evaporation for high performance interdigitated back contact solar cells
Chen YZ, Yang Y, Zhang XL, Xu GC, Marmon JK, Li ZL, Feng ZQ, Verlinden PJ, Shen H
Solar Energy Materials and Solar Cells, 143, 205, 2015 |
| 2 |
Effects of geometrically extended contact area on electrical properties in amorphous InGaZnO thin film transistors
Kim JS, Joo MK, Piao MX, Ahn SE, Choi YH, Na J, Shin M, Han MJ, Jang HK, Kim GT
Thin Solid Films, 558, 279, 2014 |
| 3 |
Effect of Pt and Ti on Ni/Ag/(Pt or Ti)/Au p-ohmic contacts of GaN based flip-chip LEDs
Song HJ, Roh CH, Choi HG, Ha MW, Hahn CK, Park JH, Lee JH
Applied Surface Science, 257(18), 8102, 2011 |
| 4 |
Optimum location of silicide/Si interface in ultra-thin body SOI MOSFETs with recessed and elevated silicide source/drain contact structure
Kim SD
Solid-State Electronics, 53(10), 1112, 2009 |
| 5 |
Low-resistance and highly transparent Ag/IZO ohmic contact to p-type GaN
Kim HK, Yi MS, Lee SN
Thin Solid Films, 517(14), 4039, 2009 |
| 6 |
Electrode contact study for SiGe thin film operated at high temperature
Houlet LF, Shin W, Nishibori M, Izu N, Itoh T, Matsubara I
Applied Surface Science, 254(16), 4999, 2008 |
| 7 |
Characterization of electrical contacts on polycrystalline 3C-SiC thin films
Castaldini A, Cavallini A, Rossi M, Cocuzza M, Ricciardi C
Materials Science Forum, 483, 745, 2005 |
| 8 |
Titanium-based ohmic contact on p-type 4H-SiC
Jung KH, Cho NI, Lee JH, Yang SJ, Kim CK, Lee BT, Rim KH, Kim NK, Kim ED
Materials Science Forum, 389-3, 913, 2002 |
| 9 |
Formation of low resistivity ohmic contacts to n-type 3C-SiC
Wan JW, Capano MA, Melloch MR
Solid-State Electronics, 46(8), 1227, 2002 |
| 10 |
A simple approach to understanding measurement errors in the cross-bridge Kelvin resistor and a new pattern for measurements of specific contact resistivity
Ono M, Nishiyama A, Toriumi A
Solid-State Electronics, 46(9), 1325, 2002 |
