검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Investigation of the temperature dependence of random telegraph noise fluctuations in nanoscale polysilicon-channel 3-D Flash cells Nicosia G, Goda A, Spinelli AS, Compagnoni CM Solid-State Electronics, 151, 18, 2019 |
| 2 |
Impact of the array background pattern on cycling-induced threshold-voltage instabilities in nanoscale NAND Flash memories Paolucci GM, Bertuccio M, Compagnoni CM, Beltrami S, Spinelli AS, Lacaita AL, Visconti A Solid-State Electronics, 113, 138, 2015 |
| 3 |
Comprehensive investigation of the impact of lateral charge migration on retention performance of planar and 3D SONOS devices Maconi A, Arreghini A, Compagnoni CM, Van den Bosch G, Spinelli AS, Van Houdt J, Lacaita AL Solid-State Electronics, 74, 64, 2012 |
| 4 |
Comprehensive numerical simulation of threshold-voltage transients in nitride memories Mauri A, Amoroso SM, Compagnoni CM, Maconi A, Spinelli AS Solid-State Electronics, 56(1), 23, 2011 |
| 5 |
Study of nanocrystal memory reliability by CAST structures Compagnoni CM, Ielmini D, Spinelli AS, Lacaita AL, Gerardi C Solid-State Electronics, 48(9), 1497, 2004 |
| 6 |
Modeling of stress-induced leakage current and impact ionization in MOS devices Ielmini D, Spinelli AS, Lacaita AL, Ghidini G Solid-State Electronics, 46(3), 417, 2002 |
| 7 |
Simulation of polysilicon quantization and its effect on n- and p-MOSFET performance Spinelli AS, Pacelli A, Lacaita AL Solid-State Electronics, 46(3), 423, 2002 |
| 8 |
Modeling of anomalous SILC in flash memories based on tunneling at multiple defects Ielmini D, Spinelli AS, Lacaita AL, Modelli A Solid-State Electronics, 46(11), 1749, 2002 |
| 9 |
A recombination- and trap-assisted tunneling model for stress-induced leakage current Ielmini D, Spinelli AS, Lacaita AL, Martinelli A, Ghidini G Solid-State Electronics, 45(8), 1361, 2001 |