화학공학소재연구정보센터
검색결과 : 19건
No. Article
1 Recombination enhanced defect annealing in 4H-SiC
Storasta L, Carlsson FHC, Bergman JP, Janzen E
Materials Science Forum, 483, 369, 2005
2 Nonequilibrium carrier diffusion and recombination in heavily-doped and semi-insulating bulk HTCVD grown 4H-SiC crystals
Storasta L, Aleksiejunas R, Sudzius M, Kadys A, Malinauskas T, Jarasiunas K, Magnusson B, Janzen E
Materials Science Forum, 483, 409, 2005
3 Growth of homoepitaxial films on 4H-SiC(1120) and 8 degrees off-axis 4H-SiC(0001) substrates and their characterization
Bishop SM, Preble EA, Hallin C, Henry A, Storasta L, Jacobson H, Wagner BP, Reitmeier Z, Janzen E, Davis RF
Materials Science Forum, 457-460, 221, 2004
4 Investigations of possible nitrogen participation in the Z(1)/Z(2) defect in 4H-SiC
Storasta L, Henry A, Bergman JP, Janzen E
Materials Science Forum, 457-460, 469, 2004
5 Temperature-dependent Hall effect measurements in low-compensated p-type 4H-SiC
Kasamakova-Kolaklieva L, Storasta L, Ivanov IG, Magnusson B, Contreras S, Consejo C, Pernot J, Zielinski M, Janzen E
Materials Science Forum, 457-460, 677, 2004
6 Characterisation and defects in silicon carbide
Bergman JP, Jakobsson H, Storasta L, Carlsson FHC, Magnusson B, Sridhara S, Pozina G, Lendenmann H, Janzen E
Materials Science Forum, 389-3, 9, 2002
7 Characteristics of boron in 4H-SiC layers produced by high-temperature techniques
Kakanakova-Georgieva A, Yakimova R, Zhang J, Storasta L, Syvajarvi M, Janzen E
Materials Science Forum, 389-3, 259, 2002
8 Electrical activity of residual boron in silicon carbide
Storasta L, Bergman JP, Hallin C, Janzen E
Materials Science Forum, 389-3, 549, 2002
9 Photoconductivity of lightly-doped and semi-insulating 4H-SiC and the free exciton binding energy
Ivanov IG, Zhang J, Storasta L, Janzen E
Materials Science Forum, 389-3, 613, 2002
10 HTCVD grown semi-insulating SiC substrates
Ellison A, Magnusson B, Son NT, Storasta L, Janzen E
Materials Science Forum, 433-4, 33, 2002