검색결과 : 19건
No. | Article |
---|---|
1 |
Recombination enhanced defect annealing in 4H-SiC Storasta L, Carlsson FHC, Bergman JP, Janzen E Materials Science Forum, 483, 369, 2005 |
2 |
Nonequilibrium carrier diffusion and recombination in heavily-doped and semi-insulating bulk HTCVD grown 4H-SiC crystals Storasta L, Aleksiejunas R, Sudzius M, Kadys A, Malinauskas T, Jarasiunas K, Magnusson B, Janzen E Materials Science Forum, 483, 409, 2005 |
3 |
Growth of homoepitaxial films on 4H-SiC(1120) and 8 degrees off-axis 4H-SiC(0001) substrates and their characterization Bishop SM, Preble EA, Hallin C, Henry A, Storasta L, Jacobson H, Wagner BP, Reitmeier Z, Janzen E, Davis RF Materials Science Forum, 457-460, 221, 2004 |
4 |
Investigations of possible nitrogen participation in the Z(1)/Z(2) defect in 4H-SiC Storasta L, Henry A, Bergman JP, Janzen E Materials Science Forum, 457-460, 469, 2004 |
5 |
Temperature-dependent Hall effect measurements in low-compensated p-type 4H-SiC Kasamakova-Kolaklieva L, Storasta L, Ivanov IG, Magnusson B, Contreras S, Consejo C, Pernot J, Zielinski M, Janzen E Materials Science Forum, 457-460, 677, 2004 |
6 |
Characterisation and defects in silicon carbide Bergman JP, Jakobsson H, Storasta L, Carlsson FHC, Magnusson B, Sridhara S, Pozina G, Lendenmann H, Janzen E Materials Science Forum, 389-3, 9, 2002 |
7 |
Characteristics of boron in 4H-SiC layers produced by high-temperature techniques Kakanakova-Georgieva A, Yakimova R, Zhang J, Storasta L, Syvajarvi M, Janzen E Materials Science Forum, 389-3, 259, 2002 |
8 |
Electrical activity of residual boron in silicon carbide Storasta L, Bergman JP, Hallin C, Janzen E Materials Science Forum, 389-3, 549, 2002 |
9 |
Photoconductivity of lightly-doped and semi-insulating 4H-SiC and the free exciton binding energy Ivanov IG, Zhang J, Storasta L, Janzen E Materials Science Forum, 389-3, 613, 2002 |
10 |
HTCVD grown semi-insulating SiC substrates Ellison A, Magnusson B, Son NT, Storasta L, Janzen E Materials Science Forum, 433-4, 33, 2002 |