화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 Unusual step meandering due to Ehrlich-Schwoebel barrier in GaN epitaxy on the N-polar surface
Turski H, Krzyzewski F, Feduniewicz-Zmuda A, Wolny P, Siekacz M, Muziol G, Cheze C, Nowakowski-Szukudlarek K, Xing H, Jena D, Zaluska-Kotur M, Skierbiszewski C
Applied Surface Science, 484, 771, 2019
2 Nitrogen-rich growth for device quality N-polar InGaN/GaN quantum wells by plasma-assisted MBE
Turski H, Feduniewicz-Zmuda A, Sawicka M, Reszka A, Kowalski B, Krysko M, Wolny P, Smalc-Koziorowska J, Siekacz M, Muziol G, Nowakowski-Szukudlarek K, Grzanka S, Skierbiszewski C
Journal of Crystal Growth, 512, 208, 2019
3 Thermochemical biomass conversion processes and their impact on the environment
Hawrot-Paw M, Zmuda A, Koniuszy A
Przemysl Chemiczny, 98(7), 1126, 2019
4 Growth rate independence of Mg doping in GaN grown by plasma-assisted MBE
Turski H, Muziol G, Siekacz M, Wolny P, Szkudlarek K, Feduniewicz-Zmuda A, Dybko K, Skierbiszewski C
Journal of Crystal Growth, 482, 56, 2018
5 Indium incorporation in semipolar (20(2)over-bar1) and nonpolar (10(1)over-bar0) InGaN grown by plasma assisted molecular beam epitaxy
Sawicka M, Feduniewicz-Zmuda A, Krysko M, Turski H, Muziol G, Siekacz M, Wolny P, Skierbiszewski C
Journal of Crystal Growth, 459, 129, 2017
6 High power nitride laser diodes grown by plasma assisted molecular beam epitaxy
Muziol G, Siekacz M, Turski H, Wolny P, Grzanka S, Grzanka E, Feduniewicz-Zmuda A, Borysiuk J, Sobczak K, Domagala J, Nowakowska-Siwinska A, Makarowa I, Perlin P, Skierbiszewski C
Journal of Crystal Growth, 425, 398, 2015
7 Growth of InGaN and InGaN/InGaN quantum wells by plasma-assisted molecular beam epitaxy
Siekacz M, Feduniewicz-Zmuda A, Cywinski G, Krysko M, Grzegory I, Krukowski S, Waldrip KE, Jantsch W, Wasilewski ZR, Porowski S, Skierbiszewski C
Journal of Crystal Growth, 310(17), 3983, 2008
8 Role of dislocation-free GaN substrates in the growth of indium containing optoelectronic structures by plasma-assisted MBE
Skierbiszewski C, Siekacz M, Perlin P, Feduniewicz-Zmuda A, Cywinski G, Grzegory I, Leszczyniski M, Wasilewski ZR, Porowski S
Journal of Crystal Growth, 305(2), 346, 2007
9 Growth of thin AllnN/GalnN quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths
Cywinski G, Skierbiszewski C, Fedunieiwcz-Zmuda A, Siekacz M, Nevou L, Doyennette L, Tchernycheva M, Julien FH, Prystawko P, Krysko M, Grzanka S, Grzegory I, Presz A, Domagala JZ, Smalc J, Albrecht M, Remmele T, Porowski S
Journal of Vacuum Science & Technology B, 24(3), 1505, 2006