| 1 |
Correlation between spin density and V-th instability of IGZO thin-film transistors
Park JH, Lee S, Lee HS, Kim SK, Park KS, Yoon SY
Current Applied Physics, 18(11), 1447, 2018 |
| 2 |
The effect of nitrous oxide plasma treatment on the bias temperature stress of metal oxide thin film transistors with high mobility
Tseng WH, Fang SW, Lu CY, Chuang HY, Chang FW, Lin GY, Chen TW, Ma KH, Chen HS, Chen TK, Chen YH, Lee JY, Shih TH, Ting HC, Chen CY, Lin YH, Hong HJ
Solid-State Electronics, 103, 173, 2015 |
| 3 |
Short channel amorphous In-Ga-Zn-O thin-film transistor arrays for ultra-high definition active matrix liquid crystal displays: Electrical properties and stability
Kim SC, Kim YS, Yu EKH, Kanicki J
Solid-State Electronics, 111, 67, 2015 |
| 4 |
Capacitance-voltage characteristics and device simulation of bias temperature stressed a-Si:H TFTs
Tang Z, Wie CR
Solid-State Electronics, 54(3), 259, 2010 |
| 5 |
Study of Cu diffusion behavior in low dielectric constant SiOC(-H) films deposited by plasma-enhanced chemical vapor deposition
Choi CK, Lee HS, Navamathavan R, Woo JK, Kim CY
Thin Solid Films, 518(22), 6474, 2010 |
| 6 |
Drain bias dependent bias temperature stress instability in a-Si:H TFT
Tang Z, Park MS, Jin SH, Wie CR
Solid-State Electronics, 53(2), 225, 2009 |
| 7 |
Time-to-failure analysis of 5 nm amorphous Ru(P) as a copper diffusion barrier
Henderson LB, Ekerdt JG
Thin Solid Films, 517(5), 1645, 2009 |
| 8 |
Comparison of a-Si TFTs fabricated by Cat-CVD and PECVD methods
Nishizaki S, Ohdaira K, Matsumura H
Thin Solid Films, 517(12), 3581, 2009 |
| 9 |
Dielectric barriers, pore sealing, and metallization
Juneja JS, Wang PI, Karabacak T, Lu TM
Thin Solid Films, 504(1-2), 239, 2006 |
| 10 |
Extraction of electrical mechanisms of low-dielectric constant material MSZ for interconnect applications
Chang TC, Yan ST, Liu R, Lin ZW, Aoki H, Sze SM
Thin Solid Films, 447, 516, 2004 |
