| 1 |
Low-temperature growth of In-assisted silicon nanowires
Convertino A, Cuscuna M, Nicotra G, Spinella C, Felisari L, Fortunato G, Martelli F
Journal of Crystal Growth, 335(1), 10, 2011 |
| 2 |
Nitride-based green light emitting diodes grown by temperature ramping
Liu CH, Su YK, Wen TC, Chang SJ, Chuang RW
Journal of Crystal Growth, 254(3-4), 336, 2003 |
| 3 |
Real-time diagnostics of growth of germanium nanocrystallites on partially hydrogen-terminated silicon surfaces by spectroscopic ellipsometry
Schmitt F, Osipov AV, Hess P
Applied Surface Science, 188(1-2), 103, 2002 |
| 4 |
Metalorganic chemical vapor deposition of GaNAs alloys using different Ga precursors
Wei X, Wang GH, Zhang GZ, Zhu XP, Ma XY, Chen LH
Journal of Crystal Growth, 236(4), 516, 2002 |
| 5 |
Key issues for obtaining high-quality GaN films by two-flow metalorganic vapor phase epitaxy
Morimoto K, Inoue N
Journal of Crystal Growth, 237, 942, 2002 |
| 6 |
High-density V-groove InGaAs/AlGaAs quantum wires on submicron gratings by constant growth technique
Tsurumachi N, Son CS, Kim TG, Ogura M
Journal of Crystal Growth, 237, 1486, 2002 |
| 7 |
Comparison of hafnium silicate thin films on silicon (100) deposited using thermal and plasma enhanced metal organic chemical vapor deposition
Rangarajan V, Bhandari H, Klein TM
Thin Solid Films, 419(1-2), 1, 2002 |
| 8 |
Quasi-thermodynamic model of SiGe epitaxial growth
Segal AS, Karpov SY, Sid'ko AP, Makarov YN
Journal of Crystal Growth, 225(2-4), 268, 2001 |
