화학공학소재연구정보센터
검색결과 : 11건
No. Article
1 Epitaxial growth of CoSi2 on Si(001) by reactive deposition epitaxy: Island growth and coalescence
Lim CW, Petrov I, Greene JE
Thin Solid Films, 515(4), 1340, 2006
2 Strain relaxation of epitaxial CoSi2 and SiGe layers in cap-Si/Si0.83Ge0.17/Si(001) and epi-CoSi2/Si0.83Ge0.17/Si(001) structures
Shin DO, Sardela MR, Ban SH, Lee NE, Shim KH
Applied Surface Science, 237(1-4), 139, 2004
3 Structural and electrical characteristics of epitaxial CoSi2 grown on n-Si0.83Ge0.17/n-Si(001) by reactive chemical vapor deposition using a Si capping layer
Shin DO, Ban SH, Ahn YS, Lee YS, Lee NE, Shim KH
Thin Solid Films, 458(1-2), 269, 2004
4 중간층 Ti 두께에 따른 CoSi 2 의 에피텍시 성장
정성희, 송오성
Korean Journal of Materials Research, 13(2), 88, 2003
5 소오스/드레인 영역의 도펀트 양의 증가에 따른 코발트실리사이드의 물성변화
정성희, 송오성, 김민성
Korean Journal of Materials Research, 13(1), 43, 2003
6 Imaging of the structure of ultra-thin cobalt silicide films by inelastically backscattered electrons
Pronin II, Valdaitsev DA, Faradzhev NS, Gomoyunova MV, Luches P, Valeri S
Applied Surface Science, 175, 83, 2001
7 Thermal stability of thin CoSi2 layers on polysilicon implanted with As, BF2, and Si
La Via F, Alberti A, Raineri V, Ravesi S, Rimini E
Journal of Vacuum Science & Technology B, 16(3), 1129, 1998
8 Formation of Ultra-Shallow Junctions Using Epitaxial CoSi2 Thin-Film as Diffusion Sources
Bae KS, Kim JR, Hong SY, Park YB, Cho YS
Thin Solid Films, 302(1-2), 260, 1997
9 Solid Source Diffusion from Agglomerating Silicide Sources .1. Measurement and Modeling
Tsai JY, Canovai C, Osburn CM, Wang QF, Rose J, Cowen A, Denker MS
Journal of Vacuum Science & Technology B, 12(1), 219, 1994
10 Solid Source Diffusion from Agglomerating Silicide Sources .2. Experimental Results and Analysis
Tsai JY, Osburn CM, Canovai CA
Journal of Vacuum Science & Technology B, 12(6), 3149, 1994