검색결과 : 11건
No. | Article |
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1 |
Epitaxial growth of CoSi2 on Si(001) by reactive deposition epitaxy: Island growth and coalescence Lim CW, Petrov I, Greene JE Thin Solid Films, 515(4), 1340, 2006 |
2 |
Strain relaxation of epitaxial CoSi2 and SiGe layers in cap-Si/Si0.83Ge0.17/Si(001) and epi-CoSi2/Si0.83Ge0.17/Si(001) structures Shin DO, Sardela MR, Ban SH, Lee NE, Shim KH Applied Surface Science, 237(1-4), 139, 2004 |
3 |
Structural and electrical characteristics of epitaxial CoSi2 grown on n-Si0.83Ge0.17/n-Si(001) by reactive chemical vapor deposition using a Si capping layer Shin DO, Ban SH, Ahn YS, Lee YS, Lee NE, Shim KH Thin Solid Films, 458(1-2), 269, 2004 |
4 |
중간층 Ti 두께에 따른 CoSi 2 의 에피텍시 성장 정성희, 송오성 Korean Journal of Materials Research, 13(2), 88, 2003 |
5 |
소오스/드레인 영역의 도펀트 양의 증가에 따른 코발트실리사이드의 물성변화 정성희, 송오성, 김민성 Korean Journal of Materials Research, 13(1), 43, 2003 |
6 |
Imaging of the structure of ultra-thin cobalt silicide films by inelastically backscattered electrons Pronin II, Valdaitsev DA, Faradzhev NS, Gomoyunova MV, Luches P, Valeri S Applied Surface Science, 175, 83, 2001 |
7 |
Thermal stability of thin CoSi2 layers on polysilicon implanted with As, BF2, and Si La Via F, Alberti A, Raineri V, Ravesi S, Rimini E Journal of Vacuum Science & Technology B, 16(3), 1129, 1998 |
8 |
Formation of Ultra-Shallow Junctions Using Epitaxial CoSi2 Thin-Film as Diffusion Sources Bae KS, Kim JR, Hong SY, Park YB, Cho YS Thin Solid Films, 302(1-2), 260, 1997 |
9 |
Solid Source Diffusion from Agglomerating Silicide Sources .1. Measurement and Modeling Tsai JY, Canovai C, Osburn CM, Wang QF, Rose J, Cowen A, Denker MS Journal of Vacuum Science & Technology B, 12(1), 219, 1994 |
10 |
Solid Source Diffusion from Agglomerating Silicide Sources .2. Experimental Results and Analysis Tsai JY, Osburn CM, Canovai CA Journal of Vacuum Science & Technology B, 12(6), 3149, 1994 |