검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Epitaxial lateral overgrowth of AlxGa1-xN (x > 0.2) on sapphire and its application to UV-B-light-emitting devices Iida K, Kawashima T, Iwaya M, Kamiyama S, Amano H, Akasaki I, Bandoh A Journal of Crystal Growth, 298, 265, 2007 |
| 2 |
Laser diode of 350.9 nm wavelength grown on sapphire substrate by MOVPE Iida K, Kawashima T, Miyazaki A, Kasugai H, Mishima S, Honshio A, Miyake Y, Iwaya M, Kamiyama S, Amano H, Akasaki I Journal of Crystal Growth, 272(1-4), 270, 2004 |