| 1 |
Rational design and fabrication of surface tailored low dimensional Indium Gallium Nitride for photoelectrochemical water cleavage
Ganesh V, Pandikumar A, Alizadeh M, Kalidoss R, Baskar K
International Journal of Hydrogen Energy, 45(15), 8198, 2020 |
| 2 |
Semiconductor/boron nitride composites: Synthesis, properties, and photocatalysis applications
Zhou CY, Lai C, Zhang C, Zeng GM, Huang DL, Cheng M, Hu L, Xiong WP, Chen M, Wang JJ, Yang Y, Jiang LB
Applied Catalysis B: Environmental, 238, 6, 2018 |
| 3 |
Effects of channel thickness on structure and transport properties of AlGaN/InGaN heterostructures grown by pulsed metal organic chemical vapor deposition
Zhang YC, Wang ZZ, Xu SR, Bao WM, Zhang T, Huang J, Zhang JC, Hao Y
Materials Research Bulletin, 105, 368, 2018 |
| 4 |
Gate leakage currents induced by thermal fluctuation on two-dimensional electron gas in AlGaN/GaN high-electron-mobility transistors
Peng J, Liu XW, Ji D, Lu YW
Thin Solid Films, 623, 98, 2017 |
| 5 |
Effect of III-V nitrides on performance of graphene based SPR biosensor for detection of hemoglobin in human blood sample: A comparative analysis
Mohanty G, Sahoo BK
Current Applied Physics, 16(12), 1607, 2016 |
| 6 |
Properties of AlN film grown on Si (111)
Dai YQ, Li SM, Sun Q, Peng Q, Gui CQ, Zhou Y, Liu S
Journal of Crystal Growth, 435, 76, 2016 |
| 7 |
Electrically conducting n-type AlGaN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition
Liu YS, Haq AFMS, Kao TT, Mehta K, Shen SC, Detchprohm T, Yoder PD, Dupuis RD, Xie HG, Ponce FA
Journal of Crystal Growth, 443, 81, 2016 |
| 8 |
Possible mechanism of gallium bioleaching from gallium nitride (GAN) by Arthrobacter creatinolyticus: Role of amino acids/peptides/proteins bindings with gallium
Maneesuwannarat S, Teamkao P, Vangnai AS, Yamashita M, Thiravetyan P
Process Safety and Environmental Protection, 103, 36, 2016 |
| 9 |
The beneficial effects of a p-type GaInN spacer layer on the efficiency of GaInN/GaN light-emitting diodes
Lin GB, Zhang XG, Lee SM, Papasouliotis G, Kim JK, Schubert EF, Cho J
Current Applied Physics, 15(10), 1222, 2015 |
| 10 |
Improved output power of GaN-based ultraviolet light-emitting diodes with sputtered AlN nucleation layer
Chiu CH, Lin YW, Tsai MT, Lin BC, Li ZY, Tu PM, Huang SC, Hsu E, Uen WY, Lee WI, Kuo HC
Journal of Crystal Growth, 414, 258, 2015 |
