| 1 |
A new field dependent mobility model for high frequency channel thermal noise of deep submicron RFCMOS
Ong SN, Yeo KS, Chew KWJ, Chan LHK, Loo XS, Boon CC, Do MA
Solid-State Electronics, 68, 32, 2012 |
| 2 |
Impact of velocity saturation and hot carrier effects on channel thermal noise model of deep sub-micron MOSFETs
Ong SN, Yeo KS, Chew KWJ, Chan LHK, Loo XS, Boon CC, Do MA
Solid-State Electronics, 72, 8, 2012 |
| 3 |
Modeling the input non-quasi-static effect in small signal equivalent circuit based on charge partitioning for bipolar transistors and its impact on RF noise modeling
Xia KJ, Niu GF
Solid-State Electronics, 54(12), 1566, 2010 |
| 4 |
Noise modeling concepts in nonlinear state estimation
Kolas S, Foss BA, Schei TS
Journal of Process Control, 19(7), 1111, 2009 |
| 5 |
Discussions and extension of van Vliet's noise model for high speed bipolar transistors
Xia KJ, Niu GF
Solid-State Electronics, 53(3), 349, 2009 |
| 6 |
RF and noise performance of double gate and single gate SOI
Lazaro A, Iniguez B
Solid-State Electronics, 50(5), 826, 2006 |
| 7 |
Dependence of low frequency noise in SiGe heterojunction bipolar transistors on the dimensional and structural features of extrinsic regions
Ul Hoque MM, Celik-Butler Z, Martin S, Knorr C, Bulucea C
Solid-State Electronics, 50(7-8), 1430, 2006 |
| 8 |
A nonlocal channel thermal noise model for nMOSFETs
Teng HF, Jang SL
Solid-State Electronics, 47(5), 815, 2003 |
| 9 |
An improved physics-based 1/f noise model for deep submicron MOSFETs
Wang F, Celik-Butler Z
Solid-State Electronics, 45(2), 351, 2001 |
