검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Ultrathin (5 nm) SiGe-On-Insulator with high compressive strain (-2 GPa): From fabrication (Ge enrichment process) to in-depth characterizations Glowacki E, Le Royer C, Morand Y, Pedini JM, Denneulin T, Cooper D, Barnes JP, Nguyen P, Rouchon D, Hartmann JM, Gourhant O, Baylac E, Campidelli Y, Barge D, Bonnin O, Schwarzenbach W Solid-State Electronics, 97, 82, 2014 |
| 2 |
Detailed investigation of effective field, hole mobility and scattering mechanisms in GeOI and Ge pMOSFETs Van Den Daele W, Le Royer C, Augendre E, Mitard J, Ghibaudo G, Cristoloveanu S Solid-State Electronics, 59(1), 25, 2011 |
| 3 |
Ge1-xSnx stressors for strained-Ge CMOS Takeuchi S, Shimura Y, Nishimura T, Vincent B, Eneman G, Clarysse T, Demeulemeester J, Vantomme A, Dekoster J, Caymax M, Loo R, Sakai A, Nakatsuka O, Zaima S Solid-State Electronics, 60(1), 53, 2011 |
| 4 |
Study of Shubnikov-de Haas oscillations and measurement of hole effective mass in compressively strained InXGa1-XSb quantum wells Nainani A, Irisawa T, Bennett BR, Boos JB, Ancona MG, Saraswat KC Solid-State Electronics, 62(1), 138, 2011 |
| 5 |
New floating-body effect in partially depleted SOI pMOSFET due to direct-tunneling current in the partial n plus poly gate Guegan G, Gwoziecki R, Touret P, Raynaud C, Pretet J, Gonnard O, Gouget G, Deleonibus S Solid-State Electronics, 53(7), 741, 2009 |
| 6 |
Design and optimization of a buried channel PMOS integrable in a Si1-xGexBiCMOS process Khare P, Schroder D, Sampson K Solid-State Electronics, 51(6), 828, 2007 |
| 7 |
C-infinity-continuous high-temperature model for low-doped accumulation mode silicon-on-insulator pMOSFETs Houk Y, Iniguez B, Flandre D, Nazarov A Solid-State Electronics, 50(7-8), 1261, 2006 |
| 8 |
High performance Si/SiGe pMOSFETs fabricated in a standard CMOS process technology Collaert N, Verheyen P, De Meyer K, Loo R, Caymax M Solid-State Electronics, 47(7), 1173, 2003 |
| 9 |
On the origin of the LF noise in Si/Ge MOSFETs Ghibaudo G, Chroboczek J Solid-State Electronics, 46(3), 393, 2002 |
| 10 |
The influence of geometric structure on the hot-carrier-effect immunity for deep-sub-micron grooved gate PMOSFET Ren HX, Hao Y Solid-State Electronics, 46(5), 665, 2002 |