화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 An Experimental Study of Plasma Cracking of Methane Using DBDs Aimed at Hydrogen Production
Barni R, Benocci R, Spinicchia N, Roman HE, Riccardi C
Plasma Chemistry and Plasma Processing, 39(1), 241, 2019
2 Characterization of a Plasma Jet Produced by Spark Discharges in Argon Air Mixtures at Atmospheric Pressure
Barni R, Biganzoli I, Tassetti D, Riccardi C
Plasma Chemistry and Plasma Processing, 34(6), 1415, 2014
3 ECR plasma etching of GaAs in CCl2F2/Ar/O-2 discharge and IR studies of the etched surface
Singh LSS, Tiwary KP, Purohit RK, Zaidi ZH, Husain M
Current Applied Physics, 5(4), 351, 2005
4 Absorption spectroscopy of SiH2 near 640 nm
Escribano R, Campargue A
Journal of Chemical Physics, 108(15), 6249, 1998
5 Remote plasma etching of silicon nitride and silicon dioxide using NF3/O-2 gas mixtures
Kastenmeier BEE, Matsuo PJ, Oehrlein GS, Langan JG
Journal of Vacuum Science & Technology A, 16(4), 2047, 1998
6 Global-Model for High-Pressure Electronegative Radiofrequency Discharges
Lee YT, Lieberman MA, Lichtenberg AJ, Bose F, Baltes H, Patrick R
Journal of Vacuum Science & Technology A, 15(1), 113, 1997
7 Kinetics of F Atoms and Fluorocarbon Radicals Studied by Threshold Ionization Mass-Spectrometry in a Microwave CF4 Plasma
Tserepi A, Schwarzenbach W, Derouard J, Sadeghi N
Journal of Vacuum Science & Technology A, 15(6), 3120, 1997
8 Effect of Co and CO2 Addition to the CF4/O-2 Gas System on the Etching of a Low-Pressure Chemical-Vapor-Deposition Tungsten Film
Kwon SK, Kim KN, Nam CW, Woo SI
Journal of Vacuum Science & Technology B, 13(3), 914, 1995
9 Effect of Substrate-Temperature on Dry-Etching of InP, GaAs, and AlGaAs in Iodine-Based and Bromine-Based Plasmas
Chakrabarti UK, Ren F, Pearton SJ, Abernathy CR
Journal of Vacuum Science & Technology A, 12(4), 1129, 1994