Solid-State Electronics

Solid-State Electronics, Vol.101 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (23 articles)

1 - 1	ISDRS 2013 Special Issue Foreword Iliadis AA
2 - 7	Chemical vapor sensing of two-dimensional MoS2 field effect transistor devices Friedman AL, Perkins FK, Cobas E, Jernigan GG, Campbell PM, Hanbicki AT, Jonker BT
8 - 12	Optical parameters of Zn1-xMgxO nanowires in THz regime Mazady A, Rivera A, Anwar M
13 - 17	A new T-Shaped Source/Drain Extension (T-SSDE) Gate Underlap GAA MOSFET with enhanced subthreshold analog/RF performance for low power applications Kumar M, Haldar S, Gupta M, Gupta RS
18 - 22	High speed Bias Temperature Instability measurements on 20 nm RMG HKMG MOSFETs Chandra N, Chandrashekhar S, Francis R, Kerber A, Srinivasan P, Nigam T
23 - 28	Annealing studies of AN capped, MOCVD grown GaN films Derenge MA, Kirchner KW, Jones KA, Suvarna P, Shahedipour-Sandvik S
29 - 32	Effect of seed layer on surface morphological, structural and optical properties of CdO thin films fabricated by an electrochemical deposition technique Baykul MC, Orhan N
33 - 37	Low inversion equivalent oxide thickness and enhanced mobility in MOSFETs with chlorine plasma interface engineering Li CC, Chang-Liao KS, Chen LT, Fu CH, Hong HZ, Li MC, Chi WF, Lu CC, Ye ZH, Wang TK
38 - 43	An ultra-low power regulator system for WSNs powered by energy harvesting Wang C, Park M, Zhao W, Liu GN, Dilli Z, Peckerar M
44 - 49	Analysis of heat dissipation of epitaxial graphene devices on SiC Lee K, Moon JS, Oh T, Kim S, Asbeck P
50 - 56	Organic photovoltaic performance improvement using atomic layer deposited ZnO electron-collecting layers Vasilopoulou M, Konofaos N, Davazoglou D, Argitis P, Stathopoulos NA, Savaidis SP, Iliadis AA
57 - 62	Amorphous IGZO TFTs and circuits on conformable aluminum substrates Mahmoudabadi F, Ma XX, Hatalis MK, Shah KN, Levendusky TL
63 - 69	Current collapse suppression in AlGaN/GaN HEMTs by means of slant field plates fabricated by multi-layer SiCN Kobayashi K, Hatakeyama S, Yoshida T, Piedra D, Palacios T, Otsuji T, Suemitsu T
70 - 78	Design and optimization of impurity- and electrostatically-doped superlattice FETs to meet all the ITRS power targets at V-DD=0.4 V Maiorano P, Gnani E, Gnudi A, Reggiani S, Baccarani G
79 - 84	A new non-volatile memory architecture embedding microbatteries to improve data retention criterion Postel-Pellerin J, Chiquet P, Lalande F
85 - 89	Parametric amplifier based dynamic clocked comparator Shrimali H, Liberali V
90 - 94	Development and fabrication of extended short wavelength infrared HgCdTe sensors grown on CdTe/Si substrates by molecular beam epitaxy Simingalam S, VanMil BL, Chen YP, DeCuir EA, Meissner GP, Wijewarnasuriya P, Dhar NK, Rao MV
95 - 105	Cluster beam synthesis of metal and metal-oxide nanoparticles for emerging memories Verrelli E, Tsoukalas D
106 - 115	Pulsed laser deposition and annealing of Bi2-xSbxTe3 thin films for p-type thermoelectric elements Cornett JE, Rabin O
116 - 121	Spin injection in a semiconductor through a space-charge layer Ghosh J, Windbacher T, Sverdlov V, Selberherr S
122 - 125	Carrier mobility determination with a two-terminal'gridded' capacitor Barthol CJ, White MH
126 - 130	Degradation of 4H-SiC IGBT threshold characteristics due to SiC/SiO2 interface defects Pesic I, Navarro D, Miyake M, Miura-Mattausch M
131 - 136	Negative Bias Temperature Instabilities induced in devices with millisecond anneal for ultra-shallow junctions Moras M, Martin-Martinez J, Rodriguez R, Nafria M, Aymerich X, Simoen E