Solid-State Electronics

Solid-State Electronics, Vol.104 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (22 articles)

1 - 5	On the exciton blocking layer at the interface organic/cathode in planar multiheterojunction organic solar cells Toumi AL, Khelil A, Tobel K, Makha M, Hernandez LA, Mouchaal Y, Cattin L, del Valle MA, Diaz FR, Bernede JC
6 - 11	Modeling the impact of substrate depletion in FDSOI MOSFETs Kushwaha P, Paydavosi N, Khandelwal S, Yadav C, Agarwal H, Duarte JP, Hu CM, Chauhan YS
12 - 19	Evaluating the CDM-Robustness of the input buffer with very fast transmission line pulse Kao TC, Lee JH, Hung CY, Lien CH, Su HD
20 - 24	Optical, spectral, and thermal characteristics of InGaN/GaN green flip-chip light-emitting diodes Lee SH, Kim DC, Kim J, Jeon SK, Yu JS
25 - 32	Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design l Crupi G, Raffo A, Avolio G, Bosi G, Sivverini G, Palomba F, Caddemi A, Schreurs DMMP, Vannini G
33 - 38	Current density-voltage and admittance characteristics of hydrogenated nanocrystalline cubic SiC/crystalline Si heterojunction diodes prepared with varying H-2 gas flow rates Tabata A, Imori Y
39 - 43	Thermal stability of amorphous InGaZnO thin film transistors passivated by AlOx layers Hu Z, Zhou DX, Xu L, Wu Q, Xie HT, Dong CY
44 - 46	Improved MOSFET characterization technique for single channel length, scaled transistors Ferdousi F, Rios R, Kuhn KJ
47 - 52	Angle dependent conductivity in graphene FET transistors Fuentevilla CH, Lejarreta JD, Cobaleda C, Diez E
53 - 60	Effect of chiral photosensitive liquid crystalline dopants on the performance of organic solar cells Iwan A, Boharewicz B, Tazbir I, Hamplova V, Bubnov A
61 - 69	Ultrafast lateral 600 V silicon SOI PiN diode with geometric traps for preventing waveform oscillation Tsukuda M, Imaki H, Omura I
70 - 74	Effect of AC pulse overshoot on nonlinearity and reliability of selectorless resistive random access memory in AC pulse operation Lee S, Song J, Lee D, Woo J, Cha E, Hwang H
75 - 78	Modelling effect of parasitics in plasmonic FETs Gutin A, Ytterdal T, Muraviev A, Shur M
79 - 85	Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors Westlund A, Sangare P, Ducournau G, Iniguez-de-la-Torre I, Nilsson PA, Gaquiere C, Desplanque L, Wallart X, Millithaler JF, Gonzalez T, Mateos J, Grahn J
86 - 89	Analysis of trap distribution in polysilicon channel transistors using the variable amplitude charge pumping method Nguyen MC, Jeon YS, Tong DT, You SW, Jeong JK, Kim B, Ahn JY, Hwang K, Choi R
90 - 95	A new compact analytical model of single electron transistor for hybrid SET-MOS circuits Jain A, Nameriakpam BS, Sarkar SK
96 - 100	A superior design for high power GaN-based light-emitting diode packages Liao KY, Tseng SH
101 - 108	Influence of growth morphology on electrical and thermal modeling of AlGaN/GaN HEMT on sapphire and silicon Mukhopadhyay P, Banerjee U, Bag A, Ghosh S, Biswas D
109 - 115	A study of InGaAs/InAlAs/InP avalanche photodiode Czuba K, Jurenczyk J, Kaniewski J
116 - 121	FinFETs using reverse substrate layer with improved gate capacitance characteristics for subthreshold application Wei X, Zhong J, Luo J, Wu H, Zhu HL, Zhao C, Yin HZ
122 - 125	Demonstration of radio-frequency response of amorphous IGZO thin film transistors on the glass substrate Su LY, Huang JJ
126 - 130	Co-axial core-shell ZnMgO/ZnO NWs Rivera A, Mazady A, Anwar M