| 1 - 4 |
Mid-wave T2SLs InAs/GaSb single pixel PIN detector with GaAs immersion lens for HOT condition
Martyniuk P, Benyahia D, Kowalewski A, Kubiszyn L, Stepien D, Gawron W, Rogalski A |
| 5 - 10 |
Equivalent-circuit modeling of a MEMS phase detector for phase-locked loop applications
Han JZ, Liao XP |
| 11 - 18 |
Small signal model parameters analysis of GaN and GaAs based HEMTs over temperature for microwave applications
Alim MA, Rezazadeh AA, Gaquiere C |
| 19 - 24 |
Evolution of the gate current in 32 nm MOSFETs under irradiation
Palumbo F, Debray M, Vega N, Quinteros C, Kalstein A, Guarin F |
| 25 - 28 |
Trigger voltage walk-out phenomenon in SOI lateral insulated gate bipolar transistor under repetitive electrostatic discharge stresses
Zhang SF, Han Y, Ma F |
| 29 - 32 |
Effects of shallow trench isolation on low frequency noise characteristics of source-follower transistors in CMOS image sensors
Kwon SK, Kwon HM, Choi WI, Song HS, Lee HD |
| 33 - 38 |
A circuit model for defective bilayer graphene transistors
Umoh IJ, Moktadir Z, Hang SJ, Kazmierski TJ, Mizuta H |
| 39 - 44 |
Compact model for non-local avalanche effect in advanced bipolar transistors: An assessment of the relaxation length and its temperature dependence
Setekera R, van der Toorn R |
| 45 - 49 |
A study on geometry effect of transmission coil for micro size magnetic induction coil
Lee KH, Jun BO, Kim S, Lee GJ, Ryu M, Choi JW, Jang JE |
| 50 - 50 |
High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications (vol 105, pg 6, 2015)
Golshani N, Derakhshandeh J, Beenakker CIM, Ishihara R |
