Solid-State Electronics

Solid-State Electronics, Vol.136 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (18 articles)

1 - 2	ISDRS 2016 special issue foreword Iliadis AA, Akturk A, Tompkins RP
3 - 11	A review of the synthesis of reduced defect density InxGa1-xN for all indium compositions Clinton EA, Vadiee E, Fabien CAM, Moseley MW, Gunning BP, Doolittle WA, Fischer AM, Wei YO, Xie HG, Ponce FA
12 - 17	Optical characterization and thermal properties of CVD diamond films for integration with power electronics Nazari M, Hancock BL, Anderson J, Hobart KD, Feygelson TI, Tadjer MJ, Pate BB, Anderson TJ, Piner EL, Holtz MW
18 - 23	X-band 5-bit MMIC phase shifter with GaN HEMT technology Sun PP, Liu H, Zhang ZJ, Geng M, Zhang R, Luo WJ
24 - 29	Design and characterization of GaN p-i-n diodes for betavoltaic devices Khan MR, Smith JR, Tompkins RP, Kelley S, Litz M, Russo J, Leathersich J, Shahedipour-Sandvik F, Jones KA, Iliadis A
30 - 35	Temperature and electric field induced metal-insulator transition in atomic layer deposited VO2 thin films Tadjer MJ, Wheeler VD, Downey BP, Robinson ZR, Meyer DJ, Eddy CR, Kub FJ
36 - 42	Electrical properties of AlGaN/GaN HEMTs in stretchable geometries Tompkins RP, Mahaboob I, Shahedipour-Sandvik F, Lazarus N
43 - 50	Temporal and voltage stress stability of high performance indium-zinc-oxide thin film transistors Song Y, Katsman A, Butcher AL, Paine DC, Zaslavsky A
51 - 54	Toward realization of small-size dual-band long-wavelength infrared photodetectors based on InAs/GaSb/AlSb type-II superlattices Chevallier R, Haddadi A, Razeghi M
55 - 59	On the applicability of the Natori formula to realistic multi-layer quantum well III-V FETs Gili A, Xanthakis JP
60 - 67	I-on/I-off ratio enhancement and scalability of gate-all-around nanowire negative-capacitance FET with ferroelectric HfO2 Jang K, Saraya T, Kobayashi M, Hiramoto T
68 - 74	Investigation and analysis of dual-k spacer with different materials and spacer lengths for nanowire-FET performance Ko H, Kim J, Kang M, Shin H
75 - 80	Design strategies for ultra-low power 10 nm FinFETs Walke A, Schlenvogt G, Kurinec S
81 - 85	Analysis and optimization of RC delay in vertical nanoplate FET Woo C, Ko K, Kim J, Kim M, Kang M, Shin H
86 - 91	Resistive switching in a metal-insulator-metal device with gamma-APTES as the insulator layer Lin JJ, Lin SH, Wu YL
92 - 101	A deterministic guide for material and mode dependence of on-chip electro-optic modulator performance Amin R, Suer C, Ma ZZ, Sarpkaya I, Khurgin JB, Agarwal R, Sorger VJ
102 - 112	Hyperbolic metamaterials: Novel physics and applications Smolyaninov II, Smolyaninova VN
113 - 119	Biocompatibility of a quad-shank neural probe Tyson J, Tran M, Slaughter G