Solid-State Electronics

Solid-State Electronics, Vol.137 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (20 articles)

1 - 5	Neutral beam process in AlGaN/GaN HEMTs: Impact on current collapse Hemmi F, Thomas C, Lai YC, Higo A, Watamura Y, Samukawa S, Otsuji T, Suemitsu T
6 - 9	ESD robustness concern for SOI-LIGBTs with typical latch-up immunity structures Ye R, Liu SY, Sun WF, Hou B
10 - 15	A novel thin-film transistor with step gate-overlapped lightly doped drain and raised source/drain design Chien FT, Chen JL, Chen CM, Chen CW, Cheng CH, Chiu HC
16 - 21	Inverter circuits on freestanding flexible substrate using ZnO nanoparticles for cost-efficient electronics Vidor FF, Meyers T, Muller K, Wirth GI, Hilleringmann U
22 - 28	Abnormal behavior with hump characteristics in current stressed a-InGaZnO thin film transistors Kim WS, Cho YJ, Lee YH, Park J, Kim G, Kim O
29 - 37	Turn-off failure in multi-finger SOI-LIGBT used for single chip inverter ICs Zhang L, Zhu J, Zhao MN, Huang XQ, Chen JJ, Sun WF, Ding DS
38 - 43	A surface-potential-based drain current compact model for a-InGaZnO thin-film transistors in Non-Degenerate conduction regime Yu F, Ma XY, Deng WL, Liou JJ, Huang JK
44 - 51	Electrothermal DC characterization of GaN on Si MOS-HEMTs Rodriguez R, Gonzalez B, Garcia J, Nunez A
52 - 57	Study of the enhancement-mode AlGaN/GaN high electron mobility transistor with split floating gates Wang H, Wang N, Jiang LL, Zhao HY, Lin XP, Yu HY
58 - 61	Double-trap model for hysteretic current-voltage characteristics of a polystyrene/ZnO nanorods stacked layer Wu YL, Lin JJ, Lin SH, Sung YH
62 - 69	A compact D-band monolithic APDP-based sub-harmonic mixer Zhang SZ, Sun LL, Wang X, Wen JC, Liu J
70 - 79	A quantum wave based compact modeling approach for the current in ultra-short DG MOSFETs suitable for rapid multi-scale simulations Hosenfeld F, Horst F, Iniguez B, Lime F, Kloes A
80 - 84	Sputtered boron indium oxide thin-film transistors Stewart KA, Gouliouk V, Keszler DA, Wager JF
85 - 94	Novel analytical model for optimizing the pull-in voltage in a flexured MEMS switch incorporating beam perforation effect Guha K, Laskar NM, Gogoi HJ, Borah AK, Baishnab KL, Baishya S
95 - 101	Low frequency noise in tunneling field effect transistors Bu ST, Huang DM, Jiao GF, Yu HY, Li MF
102 - 108	Theoretical performance of mid wavelength HgCdTe(100) heterostructure infrared detectors Kopytko M
109 - 116	A nonlinear model for frequency dispersion and DC intrinsic parameter extraction for GaN-based HEMT Nguyen TTL, Kim SD
117 - 122	Interface traps at Al2O3/InAlN/GaN MOS-HEMT -on-200 mm Si Kumar S, Remesh N, Dolmanan SB, Tripathy S, Raghavan S, Muralidharan R, Nath DN
123 - 127	Analysis of Self-Heating Effects on vertical FET according to Shallow Trench Isolation Myeong I, Son D, Kim H, Kang M, Shin H
128 - 133	28 nm CMOS process ESD protection based on diode-triggered silicon controlled rectifier Li X, Dong SR, Jin H, Miao M, Hu T, Guo W, Wong H