Solid-State Electronics

Solid-State Electronics, Vol.156 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (15 articles)

1 - 4	Effect of beveled mesa angle on the leakage performance of 4H-SiC avalanche photodiodes Chong E, Koh YJ, Lee DH, Bae IH, Kim JS, Jeong YS, Ryu JY, Lee JY, Kang MJ, Park JH, Choi KK
5 - 11	Investigation on dependency mechanism of inverter voltage gain on current level of photo stressed depletion mode thin-film transistors Lee BH, Kim S, Lee SY
12 - 15	Comparison of source/drain electrodes in thin-film transistors based on room temperature deposited zinc nitride films Dominguez MA, Pau JL, Orduna-Diaz A, Redondo-Cubero A
16 - 22	Full capacitance model, considering the specifics of amorphous oxide semiconductor thin film transistors structures Cerdeira A, Estrada M, Hernandez-Barrios Y, Hernandez I, Iniguez B
23 - 27	Synaptic device using a floating fin-body MOSFET with memory functionality for neural network Woo SY, Choi KB, Lim S, Lee ST, Kim CH, Kang WM, Kwon D, Bae JH, Park BG, Lee JH
28 - 32	Influence of BEOL process on poly-Si grain boundary traps passivation in 3D NAND flash memory Zhao YX, Liu J, Hua ZQ, Jin L, Huo ZL
33 - 40	Feasibility of plasmonic circuits for on-chip interconnects Fukuda M, Tonooka Y, Inoue T, Ota M
41 - 47	Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs Grill A, Stampfer B, Im KS, Lee JH, Ostermaier C, Ceric H, Waltl M, Grasser T
48 - 57	Compact modeling of the subthreshold characteristics of junctionless double-gate FETs including the source/drain extension regions Bae MS, Yun I
58 - 61	Improved performance of fully-recessed normally-off LPCVD SiN/GaN MISFET using N2O plasma pretreatment Li MJ, Wang JY, Wang HY, Cao QR, Liu JQ, Huang CY
62 - 72	Effect of a pentacene anode buffer on the performance of small-molecule organic solar cells Hanya K, Onaru Y, Harafuji K
73 - 78	An algorithm to design floating field rings in SiC and Si power diodes and MOSFETs Jaikumar MG, Akshay K, Karmalkar S
79 - 86	Lumped-parameter equivalent circuit modeling of solar cells with S-shaped I-V characteristics Yu F, Huang GY, Lin W, Xu CZ, Deng WL, Ma XY, Huang JK
87 - 91	Improvement of sensing margin and reset switching fail of RRAM Park WY, Ju W, Ko YS, Kim SG, Ha TJ, Lee JY, Park YT, Kim KW, Lee JC, Lee JH, Moon JY, Lee BM, Gyun BG, Lee BK, Kim JK
92 - 96	Degradation and failure mechanism of AlGaN-based UVC-LEDs Ma ZH, Cao HC, Lin S, Li XD, Zhao LX