Solid-State Electronics

Solid-State Electronics, Vol.68 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (22 articles)

1 - 3	A fundamental understanding of nickel oxide based resistive random access memory with high percentage of oxygen Chowdhury M, Long B, Jha R, Devabhaktuni V
4 - 7	Characterization of P-channel power trench MOSFETs with polycrystalline silicon germanium gate electrode for faster switching Dikshit R, Daggubati M
8 - 12	Effects of applied bias voltage in tunnel junctions with ferroelectric barrier Zhang LB, Tang MH, Li JC, Xiao YG
13 - 17	Energy harvesting from radio frequency propagation using piezoelectric cantilevers Al Ahmad M, Alshareef HN
18 - 21	Simulation of organic inverter Papadopoulos NP, Marsal A, Picos R, Puigdollers J, Hatzopoulos AA
22 - 26	N-doped ZnO based fast response ultraviolet photoconductive detector Shinde SS, Bhosale CH, Rajpure KY
27 - 31	InGaP/InGaAs MOS-PHEMT with a nanoscale liquid phase-oxidized InGaP dielectric Lin HC, Lee FM, Cheng YC, Lee KW, Adriyanto F, Wang YH
32 - 37	A new field dependent mobility model for high frequency channel thermal noise of deep submicron RFCMOS Ong SN, Yeo KS, Chew KWJ, Chan LHK, Loo XS, Boon CC, Do MA
38 - 47	Influence of atomic layer deposition chemistry on high-k dielectrics for charge trapping memories Nikolaou N, Dimitrakis P, Normand P, Ioannou-Sougleridis V, Giannakopoulos K, Mergia K, Kukli K, Niinisto J, Ritala M, Leskela M
48 - 50	Thermal analysis of high power LED packages under the alternating current operation Shin MW, Jang SH
51 - 55	Parasitic capacitance removal of sub-100 nm p-MOSFETs using capacitance-voltage measurements Steinke DR, Piccirillo J, Gausepohl SC, Vivekand S, Rodgers MP, Lee JU
56 - 62	A comparative study for quantum transport calculations of nanosized field-effect transistors Jiang XW, Li SS, Wang LW
63 - 67	Thermal effect on the electroluminescence of InGaN/GaN multiquantum-well light-emitting devices Wu YF, Hsu HP, Liu TY
68 - 72	Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process Kawanago T, Suzuki T, Lee Y, Kakushima K, Ahmet P, Tsutsui K, Nishiyama A, Sugii N, Natori K, Hattori T, Iwai H
73 - 79	Characterization of single-sided gate-to-drain non-overlapped implantation nMOSFETs for multi-functional non-volatile memory applications Jeng ES, Chen YF, Chang CC, Peng KM, Chou SW, Ho CW, Huang CF, Gong J
80 - 84	Growth of Zn doped Cu(In,Ga)Se-2 thin films by RF sputtering for solar cell applications Li ZQ, Liu QQ, Li JJ, Sun Z, Chen YW, Yang Z, Huang SM
85 - 89	Investigation of TiO2 on AlGaAs prepared by liquid phase deposition and its application Lee KW, Huang JS, Lu YL, Lee FM, Lin HC, Wu TY, Wang YL
90 - 92	Ultraviolet photoresistors based on ZnO thin films grown by P-MBE Liu FJ, Hu ZF, Sun J, Li ZJ, Huang HQ, Zhao JW, Zhang XQ, Wang YS
93 - 97	Explicit model for the gate tunneling current in double-gate MOSFETs Chaves F, Jimenez D, Sune J
98 - 102	Point defect determination by eliminating frequency dispersion in C-V measurement for AlGaN/GaN heterostructure Li L, Yang LA, Zhang JC, Zhang LX, Dang LS, Kuang QW, Hao Y
103 - 107	Phosphorous passivation of the SiO2/4H-SiC interface Sharma YK, Ahyi AC, Issacs-Smith T, Shen X, Pantelides ST, Zhu X, Feldman LC, Rozen J, Williams JR
108 - 112	Photo-controlled molecular growth and electrical performances of a pentacene-based organic transistor with a photo-reactive insulator Bae JH, Jeong C, Lee SD, Yu CJ