Solid-State Electronics

Solid-State Electronics, Vol.78 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (30 articles)

1 - 1	Foreword Akturk A, Iliadis AA
2 - 10	(110) and (100) Sidewall-oriented FinFETs: A performance and reliability investigation Young CD, Akarvardar K, Baykan MO, Matthews K, Ok I, Ngai T, Ang KW, Pater J, Smith CE, Hussain MM, Majhi P, Hobbs C
11 - 16	Polycrystalline silicon thin-film transistor with nickel-titanium oxide by sol-gel spin-coating and nitrogen implantation Wu SC, Hou TH, Chuang SH, Chou HC, Chao TS, Lei TF
17 - 21	Electrical characteristics of SiGe pMOSFET devices with tantalum or titanium oxide higher-k dielectric stack Li CC, Chang-Liao KS, Fu CH, Tzeng TH, Lu CC, Hong HZ, Chen TC, Wang TK, Tsai WF, Ai CF
22 - 27	Improved programming/erasing speed of charge-trapping flash device with tunneling layer formed by low temperature nitrogen-rich SiN/SiO2 stack Chen CY, Chang-Liao KS, Ho JJ, Wang TK
28 - 33	Ultrafast control of electron spin in a quantum dot using geometric phase Malinovsky VS, Rudin S
34 - 38	Vertical-Channel STacked ARray (VCSTAR) for 3D NAND flash memory Park SH, Kim Y, Kim W, Seo JY, Park BG
39 - 45	Failure modes and effects criticality analysis and accelerated life testing of LEDs for medical applications Sawant M, Christou A
46 - 50	Influence of the plasma oxidation power on the switching properties of Al/CuxO/Cu memristive devices McDonald NR, Bishop SM, Briggs BD, Van Nostrand JE, Cady NC
51 - 55	Low-frequency noise in high-k LaLuO3/TiN MOSFETs Olyaei M, Malm BG, Hellstrom PE, Ostling M
56 - 61	Improvement of the GaSb/Al2O3 interface using a thin InAs surface layer Greene A, Madisetti S, Nagaiah P, Yakimov M, Tokranov V, Moore R, Oktyabrsky S
62 - 67	CoInGaAs as a novel self-aligned metallic source/drain material for implant-less In0.53Ga0.47As n-MOSFETs Ivana, Kong EYJ, Subramanian S, Zhou Q, Pan JS, Yeo YC
68 - 74	Characteristics of THz carrier dynamics in GaN thin film and ZnO nanowires by temperature dependent terahertz time domain spectroscopy measurement Balci S, Baughman W, Wilbert DS, Shen G, Kung P, Kim SM
75 - 79	Charge pumping and DCIV currents in SOI FinFETs Zhang EX, Fleetwood DM, Francis SA, Zhang CX, El-Mamouni F, Schrimpf RD
80 - 86	Data retention under gate stress on a NVM array Djenadi R, Micolau G, Postel-Pellerin J, Chiquet P, Laffont R, Ogier JL, Regnier A, Lalande F, Melkonian J
87 - 91	On-current limitation of high-k gate insulator MOSFETs Shih CH, Wang JS, Chien ND, Shia RK
92 - 96	Self-aligned multi-channel silicon nanowire field-effect transistors Zhu H, Li QL, Yuan H, Baumgart H, Ioannou DE, Richter CA
97 - 101	Finite element modeling of a nanowire-based oscillator achieved through solid-liquid phase switching for GHz operation Cywar A, Gokirmak A, Silva H
102 - 108	Effects of oblique wave propagation on the nonlinear plasma resonance in the two-dimensional channel of the Dyakonov-Shur detector Rupper G, Rudin S, Crowne FJ
109 - 114	Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure Watanabe T, Tombet SB, Tanimoto Y, Wang YY, Minamide H, Ito H, Fateev D, Popov V, Coquillat D, Knap W, Meziani Y, Otsuji T
115 - 120	One-flux theory of saturated drain current in nanoscale transistors Tang TW, Fischetti MV, Jin S, Sano N
121 - 126	DLTS and MCTS analysis of the influence of growth pressure on trap generation in MOCVD GaN Shah PB, Dedhia RH, Tompkins RP, Viveiros EA, Jones KA
127 - 130	Manufacturability of high power ultraviolet-C light emitting diodes on bulk aluminum nitride substrates Grandusky JR, Zhong ZB, Chen J, Leung C, Schowalter LJ
131 - 135	A quantum mechanical treatment of low frequency noise in high-K NMOS transistors with ultra-thin gate dielectrics Zhang XC, White MH
136 - 140	Optimisation and scaling of interfacial GeO2 layers for high-kappa gate stacks on germanium and extraction of dielectric constant of GeO2 Murad SNA, Baine PT, McNeill DW, Mitchell SJN, Armstrong BM, Modreanu M, Hughes G, Chellappan RK
141 - 146	Temperature impact on the tunnel fet off-state current components Agopian PGD, Martino MD, dos Santos SG, Martino JA, Rooyackers R, Leonelli D, Claeys C
147 - 150	Characterization of size-controlled ZnO nanorods produced by electrochemical deposition technique Orhan N, Baykul MC
151 - 155	Non volatile memory reliability evaluation based on oxide defect generation rate during stress and retention test Aziza H, Portal JM, Plantier J, Reliaud C, Regnier A, Ogier JL
156 - 158	Hot wire chemical vapor deposited boron carbide thin film/crystalline silicon diode for neutron detection application Chaudhari P, Singh A, Topkar A, Dusane R
159 - 165	Ammonia gas sensing behavior of graphene surface decorated with gold nanoparticles Gautam M, Jayatissa AH