Solid-State Electronics

Solid-State Electronics, Vol.79 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (55 articles)

1 - 1	Untitled Calleja E, Cristoloveanu S, Kuk Y, Zaslavsky A
2 - 6	A simple shift register circuit for depletion-mode oxide TFTs Pi JE, Ryu MK, Hwang CS, Park SHK, Yoon SM, Lym H, Kim Y, Oh H, Park K
7 - 10	Investigation of gate length and fringing field effects for program and erase efficiency in gate-all-around SONOS memory cells Kim MS, Choi SJ, Moon DI, Duarte JP, Kim S, Choi YK
11 - 13	Hot-electron induced defect generation in AlGaN/GaN high electron mobility transistors Rao H, Bosman G
14 - 17	Thermal sensor employing ring oscillator composed of poly-Si thin-film transistors Taya J, Nakashima A, Kimura M
18 - 21	On performance scaling and speed of junctionless transistors Koukab A, Jazaeri F, Sallese JM
22 - 25	A precise physics-based compact model for 2-DEG charge density in GaAs HEMTs applicable in all regions of device operation Khandelwal S, Goyal N, Fjeldly TA
26 - 30	Quasi-vertical multi-tooth thin film transistors based on low-temperature technology (T <= 600 degrees C) Zhang P, Jacques E, Rogel R, Coulon N, Bonnaud O
31 - 36	Nanoscale CMOSFET performance improvement and reliability study for local strain techniques Huang HL, Chen JK, Houng MP
37 - 44	Wafer scale thin-film transistors using different semiconducting purity nanotubes, dielectric materials and gate control Narasimhamurthy KC, Paily R
45 - 49	Post-annealing effect on the interface morphology and current efficiency of organic light-emitting diodes Yoon Y, Lee H, Kim T, Kim K, Choi S, Yoo HK, Friedman B, Lee K
50 - 55	On the temperature-dependent characteristics of a Pd/InAlAs based electroless-plating gate metamorphic heterostructure field-effect transistor (MHFET) Huang CC, Chen HI, Chen TY, Hsu CS, Chen CC, Chang HS, Liu WC
56 - 59	Ambipolar characteristics of the polyaniline-poly(styrene sulfonic acid)-based organic thin film transistor via poly(vinyl alcohol) interface modification Li YC, Lin YJ, Wei CY, Wang YH
60 - 64	Observation and study of the negative magnetoresistance in porous silicon Chouaibi B, Benfredj A, Romdhane S, Bouaicha M, Bouchriha H
65 - 74	2 MeV electron irradiation effects on the electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics Rafi JM, Campabadal F, Ohyama H, Takakura K, Tsunoda I, Zabala M, Beldarrain O, Gonzalez MB, Garcia H, Castan H, Gomez A, Duenas S
75 - 78	Improved performances of organic light-emitting diodes with mixed layer and metal oxide as anode buffer Xue Q, Liu SY, Zhang SM, Chen P, Zhao Y, Liu SY
79 - 86	60-GHz transmit/receive switch using a p-n diode and MOS transistors in 130-nm CMOS Mao CY, Kenneth KO
87 - 91	Synthesis and gas sensing characteristics of LaxSr1-xFeO3 nanofibers via electrospinning Liu H, Fan HT, Xu XJ, Lu HX, Zhang T
92 - 97	An in-depth Monte Carlo study of low-field mobility in ultra-thin body DGMOSFETs for modeling purposes Roldan JB, Jimenez-Molinos F, Balaguer M, Gamiz F
98 - 103	Deposition rate dependent mobility of an organic transistor with an anisotropic polymeric insulator Bae JH, Lee SD, Yu CJ
104 - 110	Analysis of mode-hopping effect in Fabry-Perot multiple-quantum well laser diodes via low frequency noise investigation Pralgauskaite S, Palenskis V, Matukas J, Saulys B, Kornijcuk V, Verdingovas V
111 - 116	Characteristics and reliabilities on the Dicing before Grinding (DBG) process in nMOSFETs Kao HL, Yeh CS, Chen MT, Chiu HC, Chang LC
117 - 124	Modeling the geometric effects on programming characteristics for the TANOS device by developing a 3D self-consistent simulation Jeon KS, Choe KS, Choi S, Park SY, Park YJ
125 - 129	The electrical, optical, and structural properties of amorphous indium gallium zinc oxide films and channel thin-film transistors Jung CH, Kang HI, Yoon DH
130 - 132	Effect of post-annealing treatment on silicon dioxide films for passivating flexible organic light-emitting diode Chou DW, Chen KL, Huang CJ, Chen WR, Meen TH
133 - 137	Modeling of the effect of uniaxial mechanical strain on drain current and threshold voltage of an n-type MOSFET Chaudhry A, Sangwan S
138 - 141	Investigation on nitrogen-doped Ge2Sb2Te5 material for phase-change memory application Yao DN, Zhou XL, Wu LC, Song ZT, Cheng LM, Rao F, Liu B, Feng SL
142 - 146	Effects of mechanical-bending and process-induced stresses on metal effective work function Yang XD, Chu M, Huang AP, Thompson S
147 - 151	Electrical properties of transparent CNT and ITO coatings on PET substrate including nano-structural aspects Park JM, Wang ZJ, Kwon DJ, Gu GY, DeVries KL
152 - 158	Phase noise calculation and variability analysis of RFCMOS LC oscillator based on physics-based mixed-mode simulation Hong SM, Oh Y, Kim N, Rieh JS
159 - 165	Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate Deleruyelle D, Putero M, Ouled-Khachroum T, Bocquet M, Coulet MV, Boddaert X, Calmes C, Muller C
166 - 171	A novel three-dimensional dual control-gate with surrounding floating-gate (DC-SF) NAND flash cell Aritome S, Whang S, Lee K, Shin D, Kim B, Kim M, Bin J, Han J, Kim S, Lee B, Jung Y, Cho S, Shin C, Yoo H, Choi S, Hong K, Park S, Hong S
172 - 178	Simulation of low Schottky barrier MOSFETs using an improved Multi-subband Monte Carlo model Gudmundsson V, Palestri P, Hellstrom PE, Selmi L, Ostling M
179 - 184	In-depth analysis and modelling of self-heating effects in nanometric DGMOSFETs Roldan JB, Gonzalez B, Iniguez B, Roldan AM, Lazaro A, Cerdeira A
185 - 191	An equivalent doping profile for CMOS substrate characterization Quaresma HJ, dos Santos PM, Serra AC
192 - 195	The thermal properties of AlGaAs/GaAs laser diode bars analyzed by the transient thermal technique Qiao YB, Feng SW, Xiong C, Ma XY, Zhu H, Guo CS, Wei GH
196 - 200	Phonon-assisted Zener tunneling in a p-n diode silicon nanowire Carrillo-Nunez H, Magnus W, Vandenberghe WG, Soree B, Peeters FM
201 - 205	Carrier recombination flux in bulk heterojunction polymer:fullerene solar cells: Effect of energy disorder on ideality factor Garcia-Belmonte G
206 - 209	A unified analytical continuous current model applicable to accumulation mode (junctionless) and inversion mode MOSFETs with symmetric and asymmetric double-gate structures Jin XS, Liu X, Wu ML, Chuai RY, Lee JH, Lee JH
210 - 217	Push the flash floating gate memories toward the future low energy application Della Marca V, Just G, Regnier A, Ogier JL, Simola R, Niel S, Postel-Pellerin J, Lalande F, Masoero L, Molas G
218 - 222	Characterization of Al2O3-HfO2-Al2O3 sandwiched MIM capacitor under DC and AC stresses Kwak HY, Kwon HM, Jung YJ, Kwon SK, Jang JH, Choi WI, Ha ML, Lee JI, Lee SJ, Lee HD
223 - 226	ZnO-based resonant cavity enhanced metal-semiconductor-metal ultraviolet photodetectors Lee HY, Hsu YT, Lee CT
227 - 232	Addition of HfO2 interface layer for improved synaptic performance of phase change memory (PCM) devices Suri M, Bichler O, Hubert Q, Perniola L, Sousa V, Jahan C, Vuillaume D, Gamrat C, DeSalvo B
233 - 237	An energy harvesting system surveyed for a variety of unattended electronic applications Zhao W, Choi K, Bauman S, Salter T, Lowy DA, Peckerar M, Khandani MK
238 - 243	HVPE GaN for high power electronic Schottky diodes Tompkins RP, Walsh TA, Derenge MA, Kirchner KW, Zhou S, Nguyen CB, Jones KA, Mulholland G, Metzger R, Leach JH, Suvarna P, Tungare M, Shahedipour-Sandvik F
244 - 247	The fabrication and the reliability of poly-Si MOSFETs using ultra-thin high-K/metal-gate stack Lee MH, Chen KJ
248 - 252	Resistive switching in zinc-tin-oxide Murali S, Rajachidambaram JS, Han SY, Chang CH, Herman GS, Conley JF
253 - 257	A comparative study on hot carrier effects in inversion-mode and junctionless MuGFETs Lee SM, Kim JY, Yu CG, Park JT
258 - 261	Analytical model for quasi-static C-V characteristics of strained-Si/SiGe pMOS capacitor Wang B, Zhang HM, Hu HY, Shu B, Zhou CY, Li YC
262 - 267	Electrical conductivity of PFPA functionalized graphene Plachinda P, Evans D, Solanki R
268 - 273	True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications Moschetti G, Abbasi M, Nilsson PA, Hallen A, Desplanque L, Wallart X, Grahn J
274 - 280	Enhanced hole mobility and density in GaSb quantum wells Bennett BR, Chick TF, Ancona MG, Boos JB
281 - 284	Large energy band-gap tuning of 980 nm InGaAs/InGaAsP quantum well structure via quantum well intermixing Qiao ZL, Tang XH, Kenneth LEK, Huei LP, Bo BX
285 - 289	BaTiO3 as charge-trapping layer for nonvolatile memory applications Huang XD, Sin JKO, Lai PT
290 - 292	An efficient heat-spreader design: First demonstration on InGaP/graded InGaAs base/GaAs collector-up HBTs Tseng HC, Chu WJ