Solid-State Electronics

Solid-State Electronics, Vol.86 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (15 articles)

1 - 5	P-type and N-type multi-gate polycrystalline silicon vertical thin film transistors based on low-temperature technology Zhang P, Jacques E, Rogel R, Bonnaud O
6 - 10	3D gate-all-around bandgap-engineered SONOS flash memory in vertical silicon pillar with metal gate Oh JS, Yang SD, Lee SY, Kim YS, Kang MH, Lim SK, Lee HD, Lee GW
11 - 16	Analysis of three different junction temperature estimation methods for AC LEDs Jayawardena A, Liu YW, Narendran N
17 - 21	Electrical characterization of Schottky contacts to N-polar GaN Downey BP, Meyer DJ, Katzer DS, Storm DF, Binari SC
22 - 26	Spray pyrolysis of ZnO-TFTs utilizing a perfume atomizer Ortel M, Trostyanskaya YS, Wagner V
27 - 31	Analytical drain current and threshold voltage model and device design of short-channel Si nanowire transistors Tanaka C, Hagishima D, Uchida K, Numata T
32 - 35	An embedded nonvolatile memory cell with spacer floating gate for power management integrated circuit applications Na KY, Baek KJ, Lee GW, Kim YS
36 - 40	Simulation and experimental study of 3-step junction termination extension for high-voltage 4H-SiC gate turn-off thyristors Lin L, Zhao JH
41 - 44	Temperature and gate bias dependence of carrier transport mechanisms in amorphous indium-gallium-zinc oxide thin film transistors Huang XM, Wu CF, Lu H, Ren FF, Chen DJ, Jiang R, Zhang R, Zheng YD, Xu QY
45 - 50	Unexpected impact of germanium content in SiGe bulk PMOSFETs Diouf C, Cros A, Soussou A, Rideau D, Haendler S, Rosa J, Ghibaudo G
51 - 57	A physically-derived nonquasi-static model of ferroelectric amplifiers for computer-aided device simulation - Part I: The ferroelectric common-drain amplifier Sayyah R, Hunt M, Ho FD
58 - 63	A physically-derived nonquasi-static model of ferroelectric amplifiers for computer-aided device simulation - Part II: The ferroelectric common-source and common-gate amplifiers Sayyah R, Hunt M, Ho FD
64 - 67	Terahertz detection in a slit-grating-gate field-effect-transistor structure Yermolayev DM, Marem'yanin KM, Fateev DV, Morozov SV, Maleev NA, Zemlyakov VE, Gavrilenko VI, Shapoval SY, Sizov FF, Popov VV
68 - 74	Precise analytical model for short channel Cylindrical Gate (CylG) Gate-All-Around (GAA) MOSFET Sharma D, Vishvakarma SK
75 - 78	Improvement of metal gate/high-k dielectric CMOSFETs characteristics by neutral beam etching of metal gate Min KS, Park C, Kang CY, Park CS, Park BJ, Kim YW, Lee BH, Lee JC, Bersuker G, Kirsch P, Jammy R, Yeom GY