Solid-State Electronics

Solid-State Electronics, Vol.89 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (33 articles)

1 - 6	Temperature-dependent investigation of low frequency noise characteristics of mesa-, fin-, and island-isolated AlGaN/GaN HFETs Manouchehri F, Valizadeh P, Kabir MZ
7 - 11	Approximate analytical expression for the tersminal voltage in multi-exponential diode models Ortiz-Conde A, Garcia-Sanchez FJ, Barrios AT, Muci J, de Souza M, Pavanello MA
12 - 16	The enhancement of unipolar resistive switching behavior via an amorphous TiOx layer formation in Dy2O3-based forming-free RRAM Zhao HB, Tu HL, Wei F, Zhang XQ, Xiong YH, Du J
17 - 21	Preliminary results on low power sigmoid neuron transistor response in 28 nm high-k metal gate Fully Depleted SOI technology Galy P, Dehan P, Jimenez J, Heitz B
22 - 25	Aluminum phthalocyanine chloride as a hole injection enhancer in organic light-emitting diodes Deng ZB, Lu ZY, Chen YL, Yin YH, Zou Y, Xiao J, Wang YS
26 - 67	Multiscale simulation of carbon nanotube transistors Maneux C, Fregonese S, Zimmer T, Retailleau S, Nguyen HN, Querlioz D, Bournel A, Dollfus P, Triozon F, Niquet YM, Roche S
68 - 71	High performance organic ultraviolet photodetectors based on novel phosphorescent Cu(I) complexes Liu CB, Liu M, Che GB, Su B, Wang L, Zhang XX, Zhang S
72 - 75	Large spatial distribution of spin accumulation in wide Au channel Ku JH, Koo HC, Han SH, Eom J, Kim G, Chang J
76 - 80	Improved ohmic contact of Ga-Doped ZnO to p-GaN by using copper sulfide intermediate layers Gu W, Xu T, Zhang JH
81 - 84	InGaAs/GaAsP/GaInP quantum well lasers with window structure fabricated by impurity free vacancy disordering Zhou L, Gao X, Xu LY, Qiao ZL, Bo BX
85 - 92	Analysis and optimisation of ohmic contact resistance and surface morphology of a Ta-based diffusion barrier layer in AlGaN/GaN HEMTs on Si (111) substrates Cho SJ, Wang C, Kim NY
93 - 100	Material engineering of GexTe100-x compounds to improve phase-change memory performances Navarro G, Sousa V, Persico A, Pashkov N, Toffoli A, Bastien JC, Perniola L, Maitrejean S, Roule A, Zuliani P, Annunziata R, De Salvo B
101 - 104	Preparing highly ordered copper phthalocyanine thin-film by controlling the thickness of the modified layer and its application in organic transistors Gu W, Hu YL, Zhu ZP, Liu N, Zhang JH, Wang J
105 - 110	Scalability of the drain-current drive of AlGaN/GaN HFETs with gate-length Sikder MJ, Valizadeh P
111 - 115	Automatic parameter extraction technique for gate leakage current modeling in double gate MOSFET Darbandy G, Gneiting T, Alius H, Alvarado J, Cerdeira A, Iniguez B
116 - 119	Silver-coated TiO2 electrodes for high performance dye-sensitized solar cells Peng W, Zeng Y, Gong H, Leng YQ, Yan YH, Hu W
120 - 123	Micro light emitting device prepared from sputter deposited thin hafnium oxide film Kuo Y, Lin CC
124 - 127	Performance improvement of normally off AlGaN/GaN FinFETs with fully gate-covered nanochannel Im KS, Son DH, Ahn HK, Bae SB, Mun JK, Nam ES, Cristoloveanu S, Lee JH
128 - 133	mu c-Si thin film transistors with very thin active layer Samb ML, Jacques E, Belarbi K, Coulon N, Mohammed-Brahim T
134 - 138	Explicit drain current model of junctionless double-gate field-effect transistors Yesayan A, Pregaldiny F, Sallese JM
139 - 141	New method for the extraction of bulk channel mobility and flat-band voltage in junctionless transistors Jeon DY, Park SJ, Mouis M, Barraud S, Kim GT, Ghibaudo G
142 - 145	Improvement on diode string structure for 65-nm RF ESD protection Ma F, Han Y, Dong SR, Zhong L, Liang HL, Gao F
146 - 152	A novel technique for degenerate p-type doping of germanium Sharp J, Lee WJ, Ploog K, Umana-Membreno GA, Faraone L, Dell JM
153 - 155	Tricolor resonant cavity organic light-emitting diodes using dielectric distributed Bragg reflector in resonant cavity Lee CT, Ho HW
156 - 160	Enhancement of light extraction efficiency in sub-300 nm nitride thin-film flip-chip light-emitting diodes Lachab M, Asif F, Zhang B, Ahmad I, Heidari A, Fareed Q, Adivarahan V, Khan A
161 - 166	Interpretation of graphene mobility data by means of a semiclassical Monte Carlo transport model Bresciani M, Palestri P, Esseni D, Selmi L, Szafranek B, Neumaier D
167 - 170	Reversible transition of resistive switching induced by oxygen-vacancy and metal filaments in HfO2 Luo WC, Hou TH, Lin KL, Lee YJ, Lei TF
171 - 176	Comparative studies on electrical bias temperature instabilities of In-Ga-Zn-O thin film transistors with different device configurations Ryu MK, Park SHK, Hwang CS, Yoon SM
177 - 188	Graphene based field effect transistors: Efforts made towards flexible electronics Sharma BK, Ahn JH
189 - 193	Control of the molecular order and cracks of the 6,13-bis(triisopropylsilylethynyl)-pentacene on a polymeric insulator by anisotropic solvent drying Keum CM, Kwon JH, Lee SD, Bae JH
194 - 197	Fully room-temperature IGZO thin film transistors adopting stacked gate dielectrics on flexible polycarbonate substrate Hsu HH, Chang CY, Cheng CH, Yu SH, Su CY, Su CY
198 - 206	Impact of electrical stress on the electrical characteristics of 2 MeV electron irradiated metal-oxide-silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics Rafi JM, Gonzalez MB, Takakura K, Tsunoda I, Yoneoka M, Beldarrain O, Zabala M, Campabadal F
207 - 211	Current collapse reduction in InAlGaN/GaN high electron mobility transistors by surface treatment of thermally stable ultrathin in situ SiN passivation Alexewicz A, Alomari M, Maier D, Behmenburg H, Giesen C, Heuken M, Pogany D, Kohn E, Strasser G