Solid-State Electronics

Solid-State Electronics, Vol.47, No.1 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (28 articles)

1 - 14	Reverse-bias safe operation area of large area MCT and IGBT Liu Y, You BD, Huang AQ
15 - 17	Polyreoxidation process step for suppressing edge direct tunneling through ultrathin gate oxides in NMOSFETs Maitra K, Bhat N
19 - 24	On the high-performance n(+)-GaAs/p(+)-InGaP/n-GaAs high-barrier gate camel-like HFETs Wang CK, Yu KH, Chiou WH, Chen CY, Chuang HM, Liu WC
25 - 31	Stability of hydrogenated in pure hydrogen plasma p-channel polycrystalline silicon thin-film transistors Hastas NA, Tassis DH, Dimitriadis CA, Brini J, Kamarinos G
33 - 38	A new depletion dependent analytical model for sheet carrier density of InAlAs/InGaAs heterostructure, InP based HEMT Gupta R, Gupta M, Gupta RS
39 - 44	Proton response of low-frequency noise in 0.20 mu m 90 GHz f(T) UHV/CVD SiGeHBTs Jin ZR, Cressler JD, Niu GF, Marshall PW, Kim HS, Reed R, Joseph AJ
45 - 50	Helium irradiated high-power P-i-N diode with low ON-state voltage drop Vobecky J, Hazdra P, Zahlava V
51 - 56	New type of defects related to nonuniform distribution of compensating centers in p-GaN films Polyakov AY, Govorkov AV, Smirnov NB, Shmidt NM, Pearton SJ, Osinsky AV
57 - 60	Effect of contact geometry on 4H-SiC rectifiers with junction termination extension Nigam S, Kim J, Luo B, Ren F, Chung GY, Pearton SJ, Williams JR, Shenai K, Neudeck P
61 - 64	Influence of edge termination geometry on performance of 4H-SiC p-i-n rectifiers Nigam S, Kim J, Luo B, Ren F, Chung GY, Pearton SJ, Williams JR, Shenai K, Neudeck P
65 - 69	Low noise photosensitive device structures based on porous silicon Balagurov LA, Bayliss SC, Yarkin DG, Andrushin SY, Kasatochkin VS, Orlov AF, Petrova EA
71 - 76	Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress Lee YM, Wu YD, Bae C, Hong JG, Lucovsky G
77 - 81	Scaleable large-signal model of 0.18 mu m CMOS process for rf power predictions Kuo CW, Hsiao CC, Ho CC, Chan YJ
83 - 91	A study into the applicability of p(+)n(+) (universal contact) to power semiconductor diodes for faster reverse recovery Anand RS, Mazhari B, Narain J
93 - 97	A method to evaluate the location of the maximum value of a function with high level of noise Ortiz-Conde A, Sanchez FJG, Caralli-D'Ambrosio A
99 - 106	Analysis of the anomalous drain current characteristics of halo MOSFETs Koo H, Lee K, Lee K, Fjeldly TA, Shur MS
107 - 110	Investigation of reliability and lifetime distribution of the gas sensors based on C2H5OH Wang YD, Wu XH, Zhou ZL, Li YF
111 - 115	Carrier mobility model for GaN Mnatsakanov TT, Levinshtein ME, Pomortseva LI, Yurkov SN, Simin GS, Khan MA
117 - 122	0.15 mu m gate-length AlGaN/GaN HEMTs with varying gate recess length Kuliev A, Kumar V, Schwindt R, Selvanathan D, Dabiran AM, Chow P, Adesida I
123 - 125	Power handling limits and degradation of large area AlGaN/GaN RF-HEMTs Dietrich R, Wieszt A, Vescan A, Leier H, Stenzel R, Klix W
127 - 130	Reducing the current crowding effect in bipolar transistors by tunnel diode emitter design Shamir N, Ritter D
131 - 141	High frequency BJT: modeling, and parameter extraction from simple measurements on encapsulated devices Karmalkar S, Chandra AS
143 - 147	A compact SOI MOS transistor model for distortion analysis Zhang GY, Liao HL, Huang R, Chan MS, Zhang X, Wang YY
149 - 153	Electron mobility in MOSFETs with ultrathin RTCVD silicon nitride/oxynitride stacked gate dielectrics Yang KJ, King TJ, Hu C, Levy S, Al-Shareef HN
155 - 159	Design and optimization of vertical surrounding gate MOSFETs for enhanced transconductance-to-current ratio (g(m)/I-ds) Kranti A, Rashmi, Haldar S, Gupta RS
161 - 163	Analysis of direct tunneling for thin SiO2 film by Wentzel, Kramers, Brillouin method - considering tail of distribution function Matsuo N, Takami Y, Kihara H
165 - 168	Silicon-based all-optical memory elements for 1.54 mu m photonics Forcales M, Gregorkiewicz T, Zavada JM
169 - 171	Enhancement of hole injection for nitride-based light-emitting devices Komirenko SM, Kim KW, Kochelap VA, Zavada JM