Solid-State Electronics

Solid-State Electronics, Vol.46, No.10 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (31 articles)

1471 - 1471	Part I - International Semiconductor Device Research Symposium ISDRS 2001 special issue - Foreword Iliadis AA, Jones KA
1473 - 1483	Analysis of parasitic barriers formed at SiGe/Si heterojunctions due to p-n junction displacement Roenker KP, Todorova D, Breed A
1485 - 1493	Simulation and design of SiGeHBTs for power amplification at 10 GHz Todorova D, Mathur N, Roenker KP
1495 - 1505	An analytical model for SiC MESFETs Murray SP, Roenker KP
1507 - 1511	Frequency dependence of GaN/AlGaN HEMT amplifier using time-domain analysis Anwar AFM, Islam SS
1513 - 1518	Electron transport within resonant tunneling diodes with staggered-bandgap heterostructures Gelmont B, Woolard D, Zhang WD, Globus T
1519 - 1524	Modeling electron mobility in MBE-grown InAs/AlSb thin films for HEMT applications using neural networks Triplett G, May G, Brown A
1525 - 1530	A dynamic source-drain extension MOSFET using a separately biased conductive spacer Gonzalez F, Mathew SJ, Chediak JA
1531 - 1534	Development of quantum cascade lasers for high peak output power and low threshold current density Slivken S, Razeghi M
1535 - 1539	AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon (111) substrates Brown JD, Borges R, Piner E, Vescan A, Singhal S, Therrien R
1541 - 1544	InP/In0.53Ga0.47As/InP double heterojunction bipolar transistors on GaAs substrates using InP metamorphic buffer layer Kim YM, Dahlstrom M, Lee S, Rodwell MJW, Gossard AC
1545 - 1551	Design optimization of multi-barrier tunneling devices using the transfer-matrix method Gehring A, Grasser T, Cheong BH, Selberherr S
1553 - 1556	Cascading structure of LDMOS and LIGBT for increasing the forward biased safe operating area Lee SC, Oh JK, Kim SS, Han MK, Choi YI
1557 - 1566	Mid-infrared photonic-crystal distributed-feedback lasers Bewley WW, Felix CL, Vurgaftman I, Bartolo RE, Lindle JR, Meyer JR, Lee H, Martinelli RU
1567 - 1571	Mixed mode circuit and device simulation of RF harmonic distortion for high-speed SiGeHBTs Malm BG, Ostling M
1573 - 1577	Charactersization of a novel GaAs-based microwave optical switch Lau KM, Wang H, Zheng HQ, Xiong YZ, Radhakrisnan K
1579 - 1582	Characterization of interface traps in the subthreshold region of implanted 4H and 6H-SiC MOSFETs Zeng Y, Softic A, White MH
1583 - 1585	Dynamic optical filtering in DWDM systems using the DMD Duncan WM, Bartlett T, Lee B, Powell D, Rancuret P, Sawyers B
1587 - 1593	Investigation and modeling of impact ionization in HEMTs for DC and RF operating conditions Isler M
1595 - 1601	Spacer FinFET: nanoscale double-gate CMOS technology for the terabit era Choi YK, King TJ, Hu CM
1603 - 1608	Hot-carrier induced degradation and recovery in polysilicon-emitter bipolar transistors Sheng SR, McAlister SP, Storey C, Lee LS, Hwang HP
1609 - 1615	A physical model of a CMOS varactor with high capacitance tuning range and its application to simulate integrated VCOs Maget J, Kraus R, Tiebout M
1617 - 1619	A systematic approach for multidimensional, closed-form analytic modeling: mobilities and effective intrinsic carrier concentrations in p-type Ga1-xAlxAs Bennett HS
1621 - 1625	High frequency GaN/AlGaN HEMT class-E power amplifier Islam SS, Anwar AFM
1627 - 1631	Metallization options and annealing temperatures for low contact resistance ohmic contacts to n-type GaSb Ikossi K, Goldenberg M, Mittereder J
1633 - 1637	Observation of resonant tunneling action in ZnO/Zn0.8Mg0.2O devices Krishnamoorthy S, Iliadis AA, Inumpudi A, Choopun S, Vispute RD, Venkatesan T
1639 - 1642	Properties of self-assembled ZnO nanostructures Ali HA, Iliadis AA, Mulligan RF, Cresce AVW, Kofinas P, Lee U
1643 - 1649	Strain relaxation in AlSb/GaSb heterostructures Sarney WL, Salamanca-Riba L, Bruno JD, Tober RL
1651 - 1657	The problems originating from the grain boundaries in dielectric storage capacitors Lee JS, Joo SK
1659 - 1664	High-quality NH3-annealed atomic layer deposited Si-nitride/SiO2 stack gate dielectrics for sub-100 nm technology generations Khosru QDM, Nakajima A, Yoshimoto T, Yokoyama S
1665 - 1668	Pt-Ga Ohmic contacts to n-ZnO using focused ion beams Inumpudi A, Iliadis AA, Krishnamoorthy S, Choopun S, Vispute RD, Venkatesan T