Solid-State Electronics

Solid-State Electronics, Vol.44, No.11 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (30 articles)

1879 - 1885	Effect of post-implantation anneal on the electrical characteristics of Ni4H-SiC Schottky barrier diodes terminated using self-aligned argon ion implantation Morrison DJ, Wright NG, Horsfall AB, Johnson CM, O'Neill AG, Knights AP, Hilton KP, Uren MJ
1887 - 1897	Characterization and modeling of fast programming bits in flash EEPROM Nkansah F, Hatalis M, Olasupo K
1899 - 1908	Non-destructive extraction of technological parameters for numerical simulation of conventional planar punch-through IGBT Azzopardi S, Trivedi M, Zardini C, Shenai K
1909 - 1916	Deep level effects on the characteristics of Al0.24Ga0.76As/In0.20Ga0.80As/GaAs and In0.48Ga0.52P/In0.20Ga0.80As/GaAs high electron mobility transistors grown by solid source molecular beam epitaxy Yoon SF, Yip KH, Zheng HQ, Gay BP
1917 - 1923	Quality optimization of liquid phase deposition SiO2 films on gallium arsenide Houng MP, Wang YH, Huang CJ, Huang SP, Horng JH
1925 - 1929	On the degeneracy of quantized inversion layer in MOS structures Ma YT, Liu LT, Yu ZP, Li ZJ
1931 - 1937	1 VSOINMOSFET with suppressed floating body effects Ren JZ, Salama CAT
1939 - 1947	Full multiband simulation of quantum electron transport in resonant tunneling devices Ogawa M, Sugano T, Miyoshi T
1949 - 1954	A comparison of npn and pnp profile design tradeoffs for complementary SiGeHBT Technology Zhang G, Cressler JD, Niu GF, Pinto A
1955 - 1960	Misfit dislocations at the GaN/SiC interface and their interaction with point defects Polyakov AY, Govorkov AV, Smirnov NB, Theys B, Jomard F, Nikitina IP, Nikolaev AE, Dmitriev VA
1961 - 1969	Simultaneous extraction of the silicon film and front oxide thicknesses on fully depleted SOI nMOSFETs Nicolett AS, Martino JA, Simoen E, Claeys C
1971 - 1983	Effects of proton implantation on electrical and recombination properties of n-GaN Polyakov AY, Usikov AS, Theys B, Smirnov NB, Govorkov AV, Jomard F, Shmidt NM, Lundin WV
1985 - 1988	An improved substrate current model for deep submicron MOSFETs Li W, Yuan JS, Chetlur S, Zhou J, Oates AS
1989 - 1995	The influence of different isolation processes on the performance of AlGaAs/GaAs heterojunction bipolar transistors for power applications Yan BP, Wang H, Pan Y, Ng GI
1997 - 2000	High performance submicron bottom gate TFTs with self aligned Ti-silicide interpoly contact and poly-channel oxidation for high-density SRAM Yaung DN, Fang YK, Huang KC, Chen CY, Wang YJ, Hung CC, Wuu SG, Liang MS
2001 - 2007	Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxides Ang CH, Ling CH, Cho BJ, Kim SJ, Cheng ZY
2009 - 2014	Perovskite-type NiSnO3 used as the ethanol sensitive material Yude W, Sun XD, Li YF, Zhou ZL, Wu XH
2015 - 2019	An empirical model for leakage current in poly-silicon thin film transistor Siddiqui MJ, Qureshi S
2021 - 2025	Direct tunneling relaxation spectroscopy in ultra-thin gate oxide MOS structures Wei JL, Mao LF, Xu MZ, Tan CH
2027 - 2033	Random line selected charge accumulation readout structure for random access infrared imager application Horng GJ, Chang CY, Yen YC, Wang WL
2035 - 2044	Hot-carrier reliability of ultra-thin gate oxide CMOS Momose HS, Nakamura S, Ohguro T, Yoshitomi T, Morifuji E, Morimoto T, Katsumata Y, Iwai H
2045 - 2051	Effect of grain boundaries on hot-carrier induced degradation in large grain polysilicon thin-film transistors Dimitriadis CA, Kimura M, Miyasaka M, Inoue S, Farmakis FV, Brini J, Kamarinos G
2053 - 2057	Modeling of thermal noise in short-channel MOSFETs at saturation Park CH, Park YJ
2059 - 2067	Monolithic broadband transimpedance amplifiers and their high frequency small and large signal characteristics using CBE-based GaInP/GaAs HBT technology Park JW, Mohammadi S, Pavlidis D, Dua C, Guyaux JL, Garcia JC
2069 - 2075	Characteristics of GaAs/InGaP/GaAs doped channel camel-gate field-effect transistor Yu KH, Chang WL, Feng SC, Liu WC
2077 - 2080	Investigation of the optical spot position on the performance of metal-semiconductor-metal structures: novel application Safwat AME, Lin CK, Kim J, Johnson FG, Johnson WB, Goldsman N, Lee C
2081 - 2083	Improvement of contact resistances on plasma-exposed silicon carbide Cheung R, Hay J, van der Drift E, Gao W
2085 - 2088	Threshold voltage control for PMOSFETs using an undoped epitaxial Si channel and a p(+)-SixGe1-x gate Hellberg PE, Zhang SL, Radamsson HH, Kaplan W
2089 - 2091	Modeling short channel effect on high-k and stacked-gate MOSFETs Zhang J, Yuan JS, Ma Y
2093 - 2095	Evaluation of surface generation velocity of sidewall oxide interfaces formed by dry etching for shallow trench isolation Riley LS, Hall S, Schitz J