Solid-State Electronics

Solid-State Electronics, Vol.45, No.11 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (19 articles)

1867 - 1868	Silicon-germanium materials and devices Maiti CK
1869 - 1874	Direct assessment of relaxation and defect propagation in different as-grown and in situ post-growth annealed thin Ge/Si and step-graded Si1-xGex/Si buffer layers Yousif MYA, Nur O, Willander M, Patel CJ, Hernandez C, Campidelli Y, Bensahel D, Kyutt RN
1875 - 1877	Ellipsometric investigation of strain reduction in Si1-x-yGexCy layers compared to Si1-xGex layers on silicon Mukerjee S, Venkataraman V
1879 - 1884	Measurement and simulation of boron diffusion in strained Si1-xGex epitaxial layers with a linearly graded germanium profile Rajendran K, Schoenmaker W
1885 - 1889	Calculation of figures of merit of Si/Si1-x-yGexCy/Si HBTs and their optimization Biswas A, Basu PK
1891 - 1897	Noise behavior in SiGe devices Regis M, Borgarino M, Bary L, Llopis O, Graffeuil J, Escotte L, Koenig U, Plana R
1899 - 1904	Epitaxy and device behaviour of collector-up SiGeHBTs with a partial p-type collector van den Oever LCM, Nanver LK, Scholtes TLM, van Zeijl HW, van Noort WD, Ren QW, Slotboom JW
1905 - 1908	Performance of SiGe-HBTs and its amplifiers Senapati B, Maiti CK
1909 - 1913	High power compact 16 GHz integrated oscillator design using active reactances Sonmez E, Abele P, Schad KB, Schumacher H
1915 - 1919	Relaxation and photoluminscence of different post-processed Si/Si1-xGex quantum well structures grown by CVD Myrberg T, Jacob AP, Nur O, Zhao QX, Willander M, DeBoer WB
1921 - 1925	Enhanced performance of silicon based photodetectors using silicon/germanium nanostructures Konle J, Presting H, Kibbel H, Thonke K, Sauer R
1927 - 1930	Incorporation and optical activation of erbium in strained silicon-germanium structures Huda MQ, Peaker AR
1931 - 1937	Recent critical issues in Si/Si1-xGex/Si heterostructure FET devices Yousif MYA, Nur O, Willander M
1939 - 1943	Bandgap engineering in vertical P-MOSFETs Chen XD, Liu KC, Ray S, Banerjee S
1945 - 1949	N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD Tan CS, Choi WK, Bera LK, Pey KL, Antoniadis DA, Fitzgerald EA, Currie MT, Maiti CK
1951 - 1955	Charge trapping characteristics of ultrathin oxynitrides on Si/Si1-x-yGexCy/Si heterolayers Ray SK, Maikap S, Samanta SK, Banerjee SK, Maiti CK
1957 - 1961	Rapid thermal oxidation of radio frequency sputtered polycrystalline Si1-xGex thin films Natarajan A, Bera LK, Choi WK, Osipowicz T, Seng HL
1963 - 1966	Structural characterisation of polycrystalline SiGe thin film Teh LK, Choi WK, Bera LK, Chim WK
1967 - 1971	On low-frequency noise of polycrystalline GexSi1-x for sub-micron CMOS technologies Chen XY, Johansen JA, Salm C, van Rheenen AD