| 1973 - 1978 |
Resistivity dependence of minority carrier lifetime and cell performance in p-type dendritic web silicon ribbon
Hilali M, Ebong A, Rohatgi A, Meier DL |
| 1979 - 1985 |
Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE
Johnson JW, Baca AG, Briggs RD, Shul RJ, Wendt JR, Monier C, Ren F, Pearton SJ, Dabiran AM, Wowchack AM, Polley CJ, Chow PP |
| 1987 - 1990 |
Planar 4H-and 6H-SiC p-n diodes fabricated by selective diffusion of boron
Gao Y, Soloviev S, Sudarshan TS |
| 1991 - 1997 |
Impact of transport noise enhancement in scaled-down MOSFET
Sumino D, Omura Y |
| 1999 - 2003 |
Temperature effect on gate leakage currents in gate dielectric films of GaAs MOSFET
Wu JY, Sze PW, Wang YH, Houng MP |
| 2005 - 2009 |
Temperature-dependent dynamic triggering characteristics of SCR-type ESD protection circuits
Jang SL, Lin LS, Li SH |
| 2011 - 2016 |
Copper electromigration modeling including barrier layer effect
Wu W, Yuan JS |
| 2017 - 2021 |
Comparative study of metal-semiconductor contact degradation by current pulses on silicon solar cells with two contact types
Perez-Quintana I, Martel A, Hernandez L |
| 2023 - 2027 |
Effect of Si, Mg, and Mg-Zn doping on structural properties of a GaN layer grown by metalorganic chemical vapor deposition
Cho HK, Lee JY, Kim KS, Yang GM |
| 2029 - 2032 |
Modeling of SiGe-base heterojunction bipolar transistor with gaussian doping distribution
Zareba A, Lukasiak L, Jakubowski A |
| 2033 - 2038 |
Role of supply voltage and load capacitors in the experimental operation of small-signal MOSFET amplifiers
Vernon E, Bryson D, Orr ES, Mohammad SN |
| 2039 - 2043 |
Surface recombination in ion-implanted MOSFETs
Mah MY, Mohammad SN, Carter RL |
| 2045 - 2049 |
Model and analysis of a delta-doping field-effect transistors utilizing an InGaP/GaAs camel-gate structure
Tsai JH |
| 2051 - 2056 |
Electromigration subjected to Joule heating under pulsed DC stress
Wu W, Yuan JS, Kang SH, Oates AS |
| 2057 - 2067 |
Space and time resolved surface temperature distributions in Si power diodes operating under self-heating conditions
Hillkirk LM, Breitholtz B, Domeij M |
| 2069 - 2075 |
A new IGBT behavioral model
Oh HS, El Nokali M |
| 2077 - 2081 |
Suppression of short channel effects by full inversion in deep sub-micron gate SOI MOSFETs
Hanajiri T, Toyabe T, Sugano T |
| 2083 - 2088 |
Enhancement of Cu nucleation in Cu-MOCVD by Pd sputtering pretreatment
Lim JM, Lee CM |
| 2089 - 2092 |
Temperature dependent photo luminescence of porous InP
Liu AM, Duan CK |
| 2093 - 2096 |
Effect of PECVD of SiO2 passivation layers on GaN and InGaP
Baik KH, Park PY, Luo B, Lee KP, Shin JH, Abernathy CR, Hobson WS, Pearton SJ, Ren F |
| 2097 - 2100 |
Modelling of SiGe heterobipolar transistors: 200 GHz frequencies with symmetrical delay times
Eberhardt J, Kasper E |
