Solid-State Electronics

Solid-State Electronics, Vol.49, No.12 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (26 articles)

1875 - 1895	Antimonide-based compound semiconductors for electronic devices: A review Bennett BR, Magno R, Boos JB, Kruppa W, Ancona MG
1896 - 1899	Modeling Kirk effect of RESURF LDMOS Sun ZL, Sun WF, Shi LX
1900 - 1904	Channel electron mobility in 4H-SiC lateral junction field effect transistors Sannuti P, Li X, Yan F, Sheng K, Zhao JH
1905 - 1908	InGaN/GaN light emitting diodes with Ni/Au mesh p-contacts Su SH, Hou CC, Yokoyama M, Chen SM
1909 - 1916	An accurate and compact large signal model for III-VHBT devices Issaoun A, Ghannouchi FM, Kouki AB
1917 - 1920	Evaluation of MOS structures processed on 4H-SiC layers grown by PVT epitaxy Ciechonski RR, Syvajarvi M, Wahab Q, Yakimova R
1921 - 1924	New dielectric material system of Nd(Mg1/2Ti1/2)O-3-CaTiO3 at microwave frequency Huang CL, Chen YB, Lin SH
1925 - 1932	Simulation prediction of electrothermal behaviors of ESD N/PMOS devices Huang CY
1933 - 1936	A CMOS active pixel sensor based DNA micro-array with nano-metallic particles detection protocol Wang YJ, Xu C, Li J, Hsing IM, Chan MS
1937 - 1941	Investigation of Au/Ti/Al ohmic contact to N-type 4H-SiC Chang SC, Wang SJ, Uang KM, Liou BW
1942 - 1946	Carrier effective mobilities in germanium MOSFET inversion layer investigated by Monte Carlo simulation Xia XL, Du G, Liu XY, Kang JF, Han RQ
1947 - 1950	A 765 mW high-voltage switching ADSL line-driver De Gezelle V, Doutreloigne J, Van Calster A
1951 - 1955	Numerical analysis of the cut-off frequency of ultra-small ballistic double-gate MOSFETs 2D nonequilibrium Green's function approach Zhou S, Jiang JF, Cai QY
1956 - 1960	Efficient white organic light-emitting device based on a thin layer of hole-transporting host with rubrene dopant Li MT, Li WL, Niu JH, Chu B, Li B, Sun XY, Zhang ZQ, Hu ZZ
1961 - 1964	Realization of GaAs/AlGaAs quantum-cascade lasers with high average optical power Liu JQ, Liu FQ, Lu XZ, Guo Y, Wang ZG
1965 - 1968	A new partial SOI power device structure with P-type buried layer Duan BX, Zhang B, Li ZJ
1969 - 1973	Surface-layer damage and responsivity in sputtered-ITO/p-GaN Schottky-barrier photodiodes Pulfrey DL, Parish G, Wee D, Nener BD
1974 - 1977	Simulation of a cobalt silicide/Si hetero-nanocrystal memory Zhao DT, Zhu Y, Li RG, Liu JL
1978 - 1985	High performance GaAs MESFETs with molecular implanted and optimized lowly-doped drain structure for maximized speed, gain and breakdown performance Wohlmuth WA, Davenport B, Bowman T, Hamilton P, Hallgren R, Pool FS, Turudic A
1986 - 1989	Improvement of the electrical performance of near UVGaN-based light-emitting diodes using Ni nanodots Song JO, Kang H, Ferguson IT, Jung SP, Lee HP, Hong HG, Lee T, Seong TY
1990 - 1995	A three-terminal planar selfgating device for nanoelectronic applications Muller T, Lorke A, Do QT, Tegude FJ, Schuh D, Wegscheider W
1996 - 2001	The annealing effect for structural, optical and electrical properties of dysprosium-manganese oxide films grown on Si substrate Dakhel AA
2002 - 2005	Electrical properties of oxidized polycrystalline silicon as a gate insulator for n-type 4H-SiC MOS devices Li P, Rodriguez A, Yarlagadda B, Velampati R, Ayers JE, Jain FC
2006 - 2010	SiGe-collector trench gate insulated gate bipolar transistor fabricated using multiple target sputtering Kudoh T, Asano T
2011 - 2015	dV/dt effect in high-voltage (1.5 kV) 4H-SiC thyristors Yurkov SN, Mnatsakanov TT, Levinshtein ME, Ivanov PA, Agarwal AK, Palmour JW
2016 - 2017	ZnSe by electron-beam evaporation used for facet passivation of high power laser diodes Shu XW, Xu C, Tian ZX, Shen GD