Solid-State Electronics

Solid-State Electronics, Vol.54, No.12 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (38 articles)

1493 - 1496	Improved characteristics of Gd2O3 nanocrystal memory with substrate high-low junction Wang JC, Lin CT, Lai CS, Hsu JL, Ai CF
1497 - 1499	Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors Tsao SW, Chang TC, Huang SY, Chen MC, Chen SC, Tsai CT, Kuo YJ, Chen YC, Wu WC
1500 - 1504	Extraction of trap densities in poly-Si thin-film transistors fabricated by solid-phase crystallization and dependence on temperature and time of post annealing Kimura M
1505 - 1510	Modelling and optimization of III/V transistors with matrices of nanowires Larsen C, Arlelid M, Lind E, Wernersson LE
1511 - 1519	Multiple steady state current-voltage characteristics in drift-diffusion modelisation of N type and semi-insulating GaAs Gunn structures Manifacier JC
1520 - 1524	Thermal design and analysis of multi-chip LED module with ceramic substrate Yin LQ, Yang LQ, Yang WQ, Guo YS, Ma KJ, Li SZ, Zhang JH
1525 - 1531	Performance and analytical modeling of Metal-Insulator-Metal Field Controlled Tunnel Transistors Ferrier M, Zhang D, Griffin P, Clerc R, Monfray S, Skotnicki T, Nish Y
1532 - 1535	Microcrystalline-Si thin-film transistors formed by using palladium silicided source/drain contact electrode Juang MH, Peng YS, Wang JL, Shye DC, Hwang CC, Jang SL
1536 - 1542	Deep micro-machining of poly-ethylene terephthalate for plastic MEMS applications Pajouhi H, Mohajerzadeh S, Nayeri F, Sanaee Z
1543 - 1548	Investigation of carbon nanotube field emitter geometry for increased current density Silan JL, Niemann DL, Maya BP, Rahman M, Meyyappan M, Nguyen CV
1549 - 1553	Design and analysis of In0 53Ga0 47As/InP symmetric gain optoelectronic mixers Zhang W, Emanetoglu NW, Bambha N, Bickford JR
1554 - 1560	Application of advanced 200 GHz Si-Ge HBTs for high dose radiation environments Praveen KC, Pushpa N, Prabakara YP, Govindaraj G, Cressler JD, Prakash APG
1561 - 1565	The low leakage current in floating body GaN metal oxide semiconductor field effect transistors Fujishima T, Otake H, Nanishi Y, Ohta H
1566 - 1571	Modeling the input non-quasi-static effect in small signal equivalent circuit based on charge partitioning for bipolar transistors and its impact on RF noise modeling Xia KJ, Niu GF
1572 - 1577	Performance optimization of conventional MOS-like carbon nanotube FETs with realistic contacts based on stair-case doping strategy Zhou HL, Zhang MX, Hao Y
1578 - 1581	Patch antenna coupled 0 2 THz TUNNETT oscillators Balasekaran S, Endo K, Tanabe T, Oyama Y
1582 - 1585	Fabrication and characterization of p-Si nanowires/ZnO film heterojunction diode Choi JH, Das SN, Moon KJ, Kar JP, Myoung JM
1586 - 1591	Analytical modeling of quantum threshold voltage for triple gate MOSFET Kumar PR, Mahapatra S
1592 - 1597	Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p-channel MuGFETs Rodrigues M, Martino JA, Mercha A, Collaert N, Simoen E, Claeys C
1598 - 1601	Comparisons of hot-carrier degradation behavior in SOI-LIGBT and SOI-LDMOS with different stress conditions Liu SY, Sun WF, Qian QS, Zhu J
1602 - 1605	Effects of arsenic-ion beam density on defect evolution in polysilicon films Chen LC, Chen SF, Wu MC
1606 - 1612	Analytical compact modeling of GMR based current sensors Application to power measurement at the IC level Roldan A, Reig C, Cubells-Beltran MD, Roldan JB, Ramirez D, Cardoso S, Freitas PP
1613 - 1616	Molecular electronic device based on pH indicator by ab initio and non-equilibrium Green function methodology Granhen ER, de Lima DB, Souza FM, Sendonio ACF, Del Nero J
1617 - 1624	Resistance blow-up effect in micro-circuit engineering Tan MLP, Saxena T, Arora V
1625 - 1631	Magnetoconcentration effect of a bipolar magnetotransistor formed in a diffusion well Tikhonov RD
1632 - 1636	Low-temperature characteristics of a-Si H thin-film transistor under mechanical strain Tsao SW, Chang TC, Yang PC, Wang MC, Chen SC, Lu J, Chang TS, Kuo WC, Wu WC, Shi Y
1637 - 1640	Voltage-controlled multiple-valued logic design using negative differential resistance devices Gan KJ, Tsai CS, Chen YW, Yeh WK
1641 - 1643	Multiple-finger turn-on uniformity in silicon-controlled rectifiers Li Y, Liou JJ
1644 - 1649	Investigation of impact of shallow trench isolation on SONOS type memory cells Xu Y, Yan F, Chen DJ, Shi Y, Li ZG, Yang F, Wang J, Wang YG, Lin P, Chang JG, Yi C
1650 - 1656	The surface energy-dictated initial growth of a pentacene film on a polymeric adhesion layer for field-effect transistors Park J, Bae JH, Kim WH, Lee SD, Gwag JS, Kim DW, Noh JC, Choi JS
1657 - 1664	Modifying electronic properties at the silicon-molecule interface using atomic tethers Hacker CA
1665 - 1668	Effect of interface states on sub-threshold response of III-V MOSFETs, MOS HEMTs and tunnel FETs Kao WC, Ali A, Hwang E, Mookerjea S, Datta S
1669 - 1674	On the accuracy of current TCAD hot carrier injection models in nanoscale devices Zaka A, Rafhay Q, Iellina M, Palestri P, Clerc R, Rideau D, Garetto D, Dornel E, Singer J, Pananakakis G, Tavernier C, Jaouen H
1675 - 1679	Robust memory cell cylinder capacitor with cross double patterning technology Kim SG, Kim CB
1680 - 1685	An analytical model of source injection for N-type enhancement mode GaN-based Schottky Source/Drain MOSFET's with experimental demonstration Park J, Ozbek AM, Ma L, Veety MT, Morgensen MP, Barlage DW, Wheeler VD, Johnson MAL
1686 - 1689	Submicron-meter polycrystalline-SiGe thin-film transistors with tunneling field-effect-transistor structure Juang MH, Peng YS, Wang JL, Shye DC, Hwang CC, Jang SL
1690 - 1696	Diamond MOSFET An innovative layout to improve performance of ICS Gimenez SP
1697 - 1700	Theoretical and experimental investigation into environment dependence and electric properties for volatile memory based on methyl-red dye thin film Reis MAL, Ribeiro TCS, Cava CE, Roman LS, Del Nero J