Solid-State Electronics

Solid-State Electronics, Vol.45, No.2 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (26 articles)

205 - 221	High frequency thermal noise modelling of short-channel MOSFET's Signoracci L, Turchetti C, Orcioni S
223 - 228	Modeling real junctions by a series combination of two ideal diodes with parallel resistance and its parameter extraction Ortiz-Conde A, Estrada M, Cerdeira A, Sanchez FJG, De Mercato G
229 - 233	Modeling of complete suppression of boron out-diffusion in Si1-xGex by carbon incorporation Rajendran K, Schoenmaker W
235 - 242	Extraction of coupling ratios for Fowler-Nordheim programming conditions Duane R, Concannon A, O'Sullivan P, O'Shea M, Mathewson A
243 - 247	Self-aligned process for emitter- and base-regrowth GaNHBTs and BJTs Lee KP, Zhang AP, Dang G, Ren F, Han J, Chu SNG, Hobson WS, Lopata J, Abernathy CR, Pearton SJ, Lee JW
249 - 253	Studies of deep centers in high-resistivity p-GaN films doped with Zn and grown on SIC by hydride vapor phase epitaxy Polyakov AY, Govorkov AV, Smirnov NB, Nikolaev AE, Nikitina IP, Dmitriev VA
255 - 259	Deep centers spectra and scanning electron microscope studies of p-GaN films prepared by metallorganic chemical vapor deposition on sapphire Polyakov AY, Smirnov NB, Govorkov AV, Usikov AS, Shmidt NM, Lundin WV
261 - 265	Studies of defects in Mg doped p-GaN films grown by hydride vapor phase epitaxy on SiC substrates Polyakov AY, Govorkov AV, Smirnov NB, Nikolaev AE, Nikitina IP, Dmitriev VA
267 - 273	Comprehensive analytical physical model of quantized inversion layer in MOS structure Ma YT, Li ZJ, Liu LT, Yu ZP
275 - 279	Effects of N-2 or Ar plasma exposure on GaAs/AlGaAs heterojunction bipolar transistors Hsu CH, Chen CC, Luo B, Ren F, Pearton SJ, Abernathy CR, Lee JW, Mackenzie KD, Sasserath J
281 - 285	An asymmetric Si/Si1-xGex channel vertical p-type metal-oxide-semiconductor field-effect transistor Chen XD, Ouyang Q, Jayanarayanan SK, Prins FE, Banerjee S
287 - 291	Latchup resistant Ge1-xSix/Si heterostructure CMOS design for VLSI application Motayed A, Mohammad SN
293 - 296	A new method for evaluating illuminated solar cell parameters Chegaar M, Ouennoughi Z, Hoffmann A
297 - 301	A novel programming technique for highly scalable and disturbance immune flash EEPROM Huang KC, Fang YK, Yaung DN, Chen CH, Hsu YL, Ting SF, Lin Y, Kuo DS, Wang CS, Liang MS
303 - 307	Theoretical analysis of distributions of the peak field and breakdown voltage along the metallurgical junction edge based on an elliptic cylindrical solution He J, Zhang X, Huang R, Wang YY
309 - 314	Characteristics and comparison of In0.49Ga0.51P/InGaAs single and double delta-doped pseudomorphic Lin KW, Yu KH, Chang WL, Cheng CC, Lin KP, Yen CH, Lour WS, Liu WC
315 - 324	Effect of exponentially distributed deep levels on the current and capacitance of a MIS diode Sanyal S, Chattopadhyay P
325 - 333	Experimental studies of frequency response and related properties of small-signal bipolar junction transistor amplifiers Motayed A, Browne TE, Onuorah AI, Mohammad SN
335 - 339	Analytical approximation for the MOSFET surface potential Chen TL, Gildenblat G
341 - 346	A three-dimensional nonlinear analysis of electromigration-induced resistance change and Joule heating in microelectronic interconnects Kang SH, Shin E
347 - 350	Ammonia-sensing characteristics of Pt and SiO2 doped SnO2 materials Wang YD, Wu XH, Su Q, Li YF, Zhou ZL
351 - 357	An improved physics-based 1/f noise model for deep submicron MOSFETs Wang F, Celik-Butler Z
359 - 364	Determining non-quasi-static small-signal equivalent circuit of a RF silicon MOSFET Lee S, Yu HK
365 - 368	Leakage current of offset gate p- and n-channel excimer laser annealed polycrystalline silicon thin-film transistors Dimitriadis CA, Kamarinos G, Brini J
369 - 371	Tuned performance of small-signal BJT Darlington pair Motayed A, Mohammad SN
373 - 377	Modeling of direct tunneling and surface roughness effects on C-V characteristics of ultra-thin gate MOS capacitors Zhang JL, Yuan JS, Ma Y, Oates AS