Solid-State Electronics

Solid-State Electronics, Vol.49, No.2 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (21 articles)

145 - 154	Incorporation of quantum corrections to semiclassical two-dimensional device modeling with the Wigner-Boltzmann equation Han ZY, Goldsman N, Lin CK
155 - 161	Influence of carrier velocity related parameters on the propagation delay time of inverters with high-k gate dielectric CMISFETs Ono M, Nishiyama A
163 - 166	InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations Chen YJ, Hsu WC, Chen YW, Lin YS, Hsu RT, Wu YH
167 - 174	Analytical non-linear charge control model for InAlAs/InGaAs/InAlAs double heterostructure high electron mobility transistor (DH-HEMT) Gupta R, Kumar S, Gupta AM, Gupta RS
175 - 181	A silicon metal-semiconductor-metal photodetector macromodel for circuit simulations Pancheri L, Scandiuzzo M, Dalla Betta GF, Stoppa D, De Nisi F, Gonzo L, Simoni A
183 - 191	Experimental and numerical study of H+ irradiated p-i-n diodes for snubberless applications Cova P, Menozzi R, Portesine M, Bianconi M, Gombia E, Mosca R
193 - 197	Structural and electrical characterization of Al2O3/HfO2/Al2O3 on strained SiGe Wu D, Lu J, Vainonen-Ahlgren E, Tois E, Tuominen M, Ostling M, Zhang SL
199 - 203	A novel InxGa1-xN/InN heterostructure field-effect transistor with extremely high two-dimensional electron-gas sheet density Kong YC, Zheng YD, Zhou CH, Deng YZ, Shen B, Gu SL, Zhang R, Han P, Jiang RL, Shi Y
205 - 212	Charge injection and transport model in organic light-emitting diodes with aluminum cathodes prepared by ion beam assisted deposition Jeong SM, Koo WH, Choi SH, Jo SJ, Baik HK, Lee SJ, Song KM
213 - 217	AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with a liquid phase oxidized AlGaAs as gate dielectric Lee KW, Sze PW, Wang YH, Houng MP
219 - 225	Aluminum nitride films deposited under various sputtering parameters on molybdenum electrodes Huang CL, Tay KW, Wu L
227 - 232	Measuring the specific contact resistance of contacts to semiconductor nanowires Mohney SE, Wang Y, Cabassi MA, Lew KK, Dey S, Redwing JM, Mayer TS
233 - 237	On the homogeneity of the turn-on process in high-voltage 4H-SiC thyristors Levinshtein ME, Ivanov PA, Agarwal AK, Palmour JW
239 - 244	Numerical local-potential-averaging method for quantum mechanical simulations Kim KY
245 - 250	High frequency investigation of graded gap injectors for GaAs Gunn diodes Montanari S, Forster A, Lepsa MI, Luth H
251 - 256	Theoretical study of the influence of strain and polarization on performance of AlGaN/4H-SiC HBT Mastro MA, Eddy CR, Bassim ND, Twigg ME, Edwards A, Henry RL, Holm RH
257 - 266	A novel interband-resonant tunneling diode (I-RTD) based high-frequency oscillator Woolard D, Zhang WD, Gelmont B
267 - 270	An extended analytical approximation for the MOSFET surface potential Chen TL, Gildenblat G
271 - 274	Fringe-induced barrier lowering (FIBL) included threshold voltage model for double-gate MOSFETs Chen Q, Wang LH, Meindl JD
275 - 277	A comparison of the exact and an approximate solution for the resistance between two coplanar circular discs Kristiansson S, Kagganti SP, Ingvarson F, Jeppson KO
279 - 282	Direct demonstration of the'virtual gate' mechanism for current collapse in AlGaN/GaN HFETs Wells AM, Uren MJ, Balmer RS, Hilton KP, Martin T, Missous M