Solid-State Electronics

Solid-State Electronics, Vol.50, No.2 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (35 articles)

103 - 108	Improved electrical and surface characteristics of metal-oxide-semiconductor device with gate hafnium oxynitride by chemical dry etching Cheng CL, Chang-Liao KS, Wang TK
109 - 113	Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices Wei JY, Maikap S, Lee MH, Lee CC, Liu CW
114 - 118	Formation of Mo gate electrode with adjustable work function on thin Ta2O5 high-k dielectric films Juang MH, Lin TY, Jang SL
119 - 124	A comparative study of blue, green and yellow light emitting diode structures grown by metal organic chemical vapor deposition Ramaiah KS, Su YK, Chang SJ, Chen CH
125 - 128	AlGaAs buffer structure grown by metalorganic vapor phase epitaxy for GaAs-based field-effect transistors Shiao HP
129 - 133	Performance improvement of organic thin film transistors by SiO2/pentacene interface modification using an electrostatically assembled PDDA monolayer Zhu M, Varahramyan K
134 - 141	Granular description of charging kinetics in silicon nanocrystals memories Busseret C, Ferraton S, Montes L, Zimmermann J
142 - 148	Fabrication of high-speed and uncooled AlGaInAs ridge-waveguide laser diodes by STOP technique Peng TC, Yang CC, Huang YH, Wu MC, Ho CL, Ho WJ
149 - 154	A thorough study of hydrogen-related gate oxide degradation in deep submicron MOSFET's with deuterium treatment process Lee JS, Lee YH, Hess K
155 - 163	A numerical study of field plate configurations in RF SOI LDMOS transistors Cortes I, Roig J, Flores D, Urresti J, Hidalgo S, Rebollo J
164 - 169	Electrical characteristics of GaAs nanocrystalline thin film Nayak J, Sahu SN
170 - 176	Characterization of oxide charge trapping in ultrathin N2O oxide using direct tunneling current Wong H, Wong CK, Fu Y, Liou JJ
177 - 180	Measurement of generation parameters on Ru/HfO2/Si MOS capacitor Tapajna M, Harmatha L, Husekova K
181 - 190	Proton and gamma radiation effects in a new first-generation SiGeHBT technology Haugerud BM, Pratapgarhwala MM, Comeau JP, Sutton AK, Prakash APG, Cressler JD, Marshall PW, Marshall CJ, Ladbury RL, El-Diwany M, Mitchell C, Rockett L, Bach T, Lawrence R, Haddad N
191 - 198	Detection of hidden structures in a photoexcited semiconductor via principal-component analysis Shiau YH
199 - 204	SiGe-Si junctions with boron-doped SiGe films deposited by co-sputtering Jelenkovic EV, Tong KY, Cheung WY, Wong SP, Shi BR, Pang GKH
205 - 208	Electrostatic coupling between nanocrystals in a quantum flash memory Cordan AS, Leroy Y, Leriche B
209 - 213	Low-temperature processing and properties of nanocrystalline-SiC/crystalline Si heterojunction devices Colder H, Rizk R, Pichon L, Bonnaud O
214 - 219	Conductance deep-level transient spectroscopy study of 1 mu m gate length 4H-SiC MESFETs Gassoumi M, Bluet JM, Dermoul I, Maaref H, Guillot G, Morvan E, Dua C, Brylinski C
220 - 227	Temperature and polarization dependent polynomial based non-linear analytical model for gate capacitance of A1(m)Ga(1-m)/GaN MODFET Chattopadhyay MK, Tokekar S
228 - 231	Series resistance influence on intersecting behaviour of inhomogeneous Schottky diodes I-V curves Osvald J
232 - 236	Fabrication of poly-Si TFT with silicided Schottky barrier source/drain, high-kappa gate dielectric and metal gate Zhu SY, Singh J, Zhu CX, Du A, Li MF
237 - 240	Electrical characteristics of high-kappa grown by direct sputtering dielectric film method Sen B, Sarkar CK, Wong H, Chan M, Kok CW
241 - 247	Amorphous and excimer laser annealed SiC films for TFT fabrication Garcia B, Estrada M, Albertin KF, Carreno MNP, Pereyra I, Resendiz L
248 - 253	Monte Carlo study of remote Coulomb and remote surface roughness scattering in nanoscale GePMOSFETs with ultrathin high-kappa dielectrics Ghosh B, Chen JH, Fan XF, Register LF, Banerjee SK
254 - 258	A modified Angelov model for InGaP/InGaAs enhancement and depletion-mode pHEMTs using symbolic defined device technology Cheng CS, Shih YJ, Chiu HC
259 - 262	Comments on "Modeling MOSFET surface capacitance behavior under non-equilibrium" He J, Zhang X, Wang YY
263 - 267	Benchmark tests on surface potential based charge-sheet models He J, Zhang X, Zhang GG, Wang YY
268 - 271	Charge storage in a metal-oxide-semiconductor capacitor containing cobalt nanocrystals Zhao DT, Zhu Y, Liu JL
272 - 275	New pixel circuits for driving active matrix organic light emitting diodes Chen BT, Tai YH, Kuo YJ, Tsai CC, Cheng HC
276 - 281	LaAlO3 as tunnel dielectric for low-voltage and low-power p-channel flash memory free of drain disturb Cai YM, Huang R, Shan XN, Zhou FL, Li Y, Wang YY
282 - 286	Anomalous effects of temperature and UV illumination on the operation of AlGaN/GaN MODFET Valizadeh P, Alekseev E, Pavlidis D, Yun F, Morkoc H
287 - 290	Dose radiation effects in FinFETs Wu XS, Chan PCH, Orozco A, Vazquez A, Chaudhry A, Colinge JP
291 - 296	High power and high breakdown delta-doped In0.35Al0.65As/In0.35Ga0.65As metamorphic HEMT Yu SJ, Hsu WC, Chen YJ, Wu CL
297 - 299	Nonalloyed Ti/indium tin oxide and Ti ohmic contacts to n-type GaN using plasma pre-treatmentnn Hwang JD, Yang GH, Lin CC, Chang SJ