Solid-State Electronics

Solid-State Electronics, Vol.44, No.4 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (26 articles)

571 - 579	Electrical characteristics modeling of large area boron compensated 6H-SiC pn structures Brezeanu G, Badila M, Tudor B, Godignon P, Millan J, Locatelli ML, Chante JP, Lebedev A, Savkina NS
581 - 585	A new wide voltage operation regime double heterojunction bipolar transistor Cheng SY, Pan HJ, Feng SC, Yu KH, Tsai JH, Liu WC
587 - 592	Experimental I-V characteristics of AlGaAs/GaAs and GaInP/GaAs (D)HBTs with thin bases Hsin YM, Asbeck PM
593 - 604	Design tradeoff guidelines for n-channel delta-doped Si/SiGe heterojunction MOSFETs Ip BK, Brews JR
605 - 611	An equivalent electric-field approximation for formulating sheet density of induced electrons in a silicon layer of symmetric and asymmetric double-gate SOI MOSFETs Ikeno R, Aoki M
613 - 617	Temperature dependence of GaN high breakdown voltage diode rectifiers Chyi JI, Lee CM, Chuo CC, Cao XA, Dang GT, Zhang AP, Ren F, Pearton SJ, Chu SNG, Wilson RG
619 - 622	Surface and bulk leakage currents in high breakdown GaN rectifiers Ren F, Zhang AP, Dang GT, Cao XA, Cho H, Pearton SJ, Chyi JI, Lee CM, Chuo CC
623 - 630	Anode hole injection and stress induced leakage current decay in metal-oxide-semiconductor capacitors Meinertzhagen A, Petit C, Jourdain M, Mondon F
631 - 638	Characteristics of high breakdown voltage Schottky barrier diodes using p(+)-polycrystalline-silicon diffused-guard-ring Liou BW, Lee CL
639 - 648	Room temperature annealing of 5.48 MeV He induced defect in p(+)n and n(+)p grown by metal-organic chemical vapour deposition Khan A
649 - 654	High temperature characteristics of GaN-based Heterojunction Bipolar Transistors and Bipolar Junction Transistors Cao XA, Van Hove JM, Klaassen JJ, Polley CJ, Wowchack AM, Chow PP, King DJ, Ren F, Dang G, Zhang AP, Abernathy CR, Pearton SJ
655 - 661	Non-alloyed Pd/Sn and Pd/Sn/Au Ohmic contacts for GaAs MESFETs: Technology and performance Islam MS, McNally PJ, Alam AHMZ, Huda MQ
663 - 671	Barrier height inhomogeneities of epitaxial CoSi2 Schottky contacts on n-Si (100) and (111) Zhu SY, Van Meirhaeghe RL, Detavernier C, Cardon F, Ru GP, Qu XP, Li BZ
673 - 675	New simple procedure to determine the threshold voltage of MOSFETs Sanchez FJG, Ortiz-Conde A, De Mercato G, Salcedo JA, Liou JJ, Yue Y
677 - 684	Extraction of the lightly doped drain concentration of fully depleted SOINMOSFETs using the back gate bias effect Nicolett AS, Martino JA, Simoen E, Claeys C
685 - 690	GaN epilayers grown on 100 mm diameter Si(111) substrates Liaw HM, Venugopal R, Wan J, Doyle R, Fejes PL, Melloch MR
691 - 696	A new mobility model to explain the transconductance overshoot effect observed in ultra-short-channel length MOSFETs Kolhatkar JS, Dutta AK
697 - 701	Coupling-induced magnetoresistance features in strongly coupled double quantum wells Velasquez R
703 - 711	Microelectronic circuit characterization via photothermal radiometry of scribeline recombination lifetime Rodriguez ME, Mandelis A, Pan G, Garcia JA, Riopel Y
713 - 718	Fast switching of light-emitting diodes Brailovsky AB, Mitin VV
719 - 724	Short circuit current vs cell thickness in solar cells under rear illumination: a direct evaluation of the diffusion length Pla JC, Tamasi MJL, Bolzi CG, Venier GL, Duran JC
725 - 728	Reactive ion etching of GaN using BCl3, BCl3/Ar and BCl3/N-2 gas plasmas Basak D, Nakanishi T, Sakai S
729 - 737	Distributive effects on HBT S-parameters Anholt R
739 - 746	Photo-luminescence and transmission electron microscope studies of low-and high-reliability AlGaAs/GaAs HBTs Mohammadi S, Hubbard SM, Chelli C, Pavlidis D, Bayraktaroglu B
747 - 755	Crystallinity and microstructures of aluminum nitride films deposited on Si(111) substrates Liaw HM, Doyle R, Fejes PL, Zollner S, Konkar A, Linthicum KJ, Gehrke T, Davis RF
757 - 760	W ohmic contact for highly doped n-type GaN films Lin CF, Cheng HC, Chi GC