Solid-State Electronics

Solid-State Electronics, Vol.46, No.4 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (25 articles)

451 - 458	An investigation on RF CMOS stability related to bias and scaling Su JG, Wong SC, Chang CY
459 - 466	Comparison of the electrical behavior in the subthreshold region between laser and solid phase crystallized polysilicon thin film transistors Pichon L, Mercha A, Carin R, Mohammed-Brahim T, Bonnaud O, Helen Y
467 - 476	Surface passivation of AlGaN/GaN HEMTs using MBE-grown MgO or Sc2O3 Luo B, Johnson JW, Gila BP, Onstine A, Abernathy CR, Ren F, Pearton SJ, Baca AG, Dabiran AM, Wowchack AM, Chow PP
477 - 480	Organic light-emitting diode on indium zinc oxide film prepared by ion assisted deposition dc sputtering system Lee WJ, Fang YK, Ho JJ, Chen CY, Chiou LH, Wang SJ, Dai F, Hsieh T, Tsai RY, Huang D, Ho FC
481 - 485	Observation of photoinduced shot noise in planar Mo/n-Si/Mo structures with undepleted region Niemcharoen S, Ando T, Supadech S, Yasumura Y, Sato K
487 - 496	A critical review of thermal models for electro-thermal simulation d'Alessandro V, Rinaldi N
497 - 500	High-gain MOS tunnel emitter transistors Aderstedt E, Medugorac I, Lundgren P
501 - 504	Release of multi-layer metal structure in MEMS devices by dry etching technique Das NC
505 - 512	Determination of semiconductor resistance under a contact Ahmad M, Shah AP, Sharma DK, Roy NR, Arora BM
513 - 523	Comparison of AlGaN/GaN high electron mobility transistors grown on AlN/SiC templates or sapphire Johnson JW, Han J, Baca AG, Briggs RD, Shul RJ, Wendt JR, Monier C, Ren F, Luo B, Chu SNG, Tsvetkov D, Dmitriev V, Pearton SJ
525 - 528	Current rise time constants in switch-on process of SiC thyristors Mnatsakanov TT, Levinshtein ME, Yurkov SN, Ivanov PA, Tandoev AG, Palmour JW, Agarwal AK
529 - 537	Body charge modelling for accurate simulation of small-signal behaviour in floating body SOI Benson J, Redman-White W, D'Halleweyn NV, Easson CA, Uren MJ
539 - 544	The 1.3-1.6 nm nitrided oxide prepared by NH3 nitridation and rapid thermal annealing for 0.1 mu m and beyond CMOS technology application Chen CH, Fang YK, Yang CW, Tsair YS, Wang MF, Yao LG, Chen SC, Yu CH, Liang MS
545 - 553	Changes in carrier profiles of bonded SOI wafers with thermal annealing measured by the spreading resistance method Ichimura M, Ito S, Arai E
555 - 558	Observation of dislocation etch pits in epitaxial lateral overgrowth GaN by wet etching Wen TC, Lee WI, Sheu JK, Chi GC
559 - 566	Full-band matrix solution of the Boltzmann transport equation and electron impact ionization in GaAs Cavassilas N, Aniel F, Fishman G, Adde R
567 - 572	Factors limiting the current gain in high-voltage 4H-SiC npn-BJTs Ivanov PA, Levinshtein ME, Rumyantsev SL, Ryu SH, Agarwal AK, Palmour JW
573 - 576	High breakdown M-I-M structures on bulk AlN Luo B, Johnson JW, Kryliouk O, Ren F, Pearton SJ, Chu SNG, Nikolaev AE, Melnik YV, Dmitriev VA, Anderson TJ
577 - 579	Modeling of direct tunneling for thin SiO2 film on n-type Si(100) by WKB method considering the quantum effect in the accumulation layer Matsuo N, Takami Y, Kitagawa Y
581 - 584	High-speed InGaP/InGaAsN/GaAs NpN double heterojunction bipolar transistors with low turn-on voltage Chang PC, Monier C, Baca AG, Li NY, Newman F, Armour E, Hou HQ
585 - 588	DX centers in Si-doped InxAl1-xAs (0.3 <= x <= 0.5) Isler M
589 - 591	Generalization of Moll-Ross relations for heterojunction bipolar transistors Mohammad SN
593 - 595	Quantitative analysis of high frequency performance of modified Darlington pair ElAhl AMHS, Fahmi MME, Mohammad SN
597 - 599	Improved current drivability and poly-gate depletion of submicron PMOSFET with poly-SiGe gate and ultra-thin nitride gate dielectric Chen CH, Fang YK, Yang CW, Ting SF, Tsair YS, Chang CN, Hou TH, Wang MF, Yu MC, Lin CL, Chen SC, Yu CH, Liang MS
601 - 603	Simple determination of the profile of bulk generation lifetime in semiconductor Ding KB