Solid-State Electronics

Solid-State Electronics, Vol.47, No.4 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (26 articles)

595 - 599	Photoassisted MOVPE grown (n)ZnSe/(p(+))GaAs heterojunction solar cells Parent DW, Rodriguez A, Ayers JE, Jain FC
601 - 605	Properties of Schottky contact of titanium on low doped p-type SiGeC alloy by rapid thermal annealing Li BJ, Chua SJ, Nikolai Y, Wang LS, Sia EK
607 - 615	A numerical comparison between MOS control and junction control high voltage devices in SiC technology Mihaila A, Udrea F, Brezeanu G, Amaratunga G
617 - 620	Impact of the band-band tunneling in silicon on electrical characteristics of Al/SiO2/P+-Si structures with the sub-3 nm oxide under positive bias El Hdiy A, Khlil R, Ziane D, Grekhov IV, Shulekin AF, Vexler MI
621 - 631	Physical modeling of off-state breakdown in power GaAs MESFETs Kunihiro K, Takahashi Y, Ohno Y
633 - 637	Fabrication of field emitter arrays using the mold method for FED application Cho KJ, Ryu JT, Lee SY
639 - 644	Investigation of thermal properties in fabricated 4H-SiC high power bipolar transistors Danielson E, Zetterling CM, Domeij M, Ostling M, Forsberg U, Janzen E
645 - 651	Modeling of kink effect in polysilicon thin film transistor using charge sheet approach Bindra S, Haldar S, Gupta RS
653 - 659	Lateral polysilicon p(+)-p-n(+) and p(+)-n-n(+) diodes Karnik SV, Hatalis MK
661 - 664	Process technique for SEU reliability improvement of deep sub-micron SRAM cell Saxena PK, Bhat N
665 - 670	Reversible light coalescence phenomena of Si photo-emitters under stressing at low breakdown currents Chatterjee A, Bhuva B
671 - 676	Deep levels studies of AlGaN/GaN superlattices Polyakov AY, Smirnov NB, Govorkov AV, Mil'vidskii MG, Pearton SJ, Usikov AS, Schmidt NM, Osinsky AV, Lundin WV, Zavarin EE, Besulkin AI
677 - 683	Inversion charge linearization in MOSFET modeling and rigorous derivation of the EKV compact model Sallese JM, Bucher M, Krummenacher F, Fazan P
685 - 689	A modified Shockley-Read-Hall theory including radiative transitions Beaucarne G, Green MA
691 - 694	Fabrication and electrical characteristics of polymer-based Schottky diode Liang GR, Cui TH, Varahramyan K
695 - 698	High performance 12 GHz enhancement-mode pseudomorphic HEMT prepared by He plus reactive ion etching Lin CS, Fang YK, Ting SF, Wang CC, Huang HK, Wu CL, Chang CS
699 - 704	The critical charge density in high voltage 4H-SiC thyristors Levinshtein ME, Ivanov PA, Mnatsakanov TT, Yurkov SN, Agarwal AK, Palmour JW
705 - 711	Modeling of electron gate current and post-stress drain current of p-type silicon-on-insulator MOSFETs Sheu CJ, Jang SL
713 - 720	Non-equilibrium modeling of tunneling gate currents in nanoscale MOSFETs Huang CK, Goldsman N
721 - 726	Achieving the ballistic-limit current in Si MOSFETs Kim K, Fossum JG
727 - 739	Analysis of the turn-off failure mechanism of silicon power diode Huang AQ, Temple V, Liu Y, Li YZ
741 - 745	Electronic wavelength tuning of multisegment InGaAsP/InP lasers with laterally coupled absorptive DFB gratings Korbl M, Groning A, Schweizer H, Gentner JL
747 - 749	Formula for the current gain cut-off frequency considering intrinsic emitter dimensions and extrinsic parasitics in HBT Shin H, Leier H
751 - 754	Modeling of the gate leakage current reduction in MOSFET with ultra-thin nitrided gate oxide Yang CW, Fang YK, Ting SF, Chen CH, Wang WD, Lin TY, Wang MF, Yu MC, Chen CL, Yao LG, Chen SC, Yu CH, Liang MS
755 - 758	Measured thermal images of a gallium arsenide power MMIC with and without RF applied to the input Oxley CH, Coaker BM, Priestley NE
759 - 762	Persistent photoconductivity in ZnCdSe MBE films grown on GaAs Hernandez L, Rivera-Alvarez Z, Hernandez-Ramirez LM, Hernandez-Calderon I