Solid-State Electronics

Solid-State Electronics, Vol.50, No.4 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (31 articles)

515 - 515	Papers Selected from the 35th European Solid-State Device Research Conference - ESSDERC'05 - Foreword Ghibaudo G, Skotnicki T
516 - 519	Silicon forever! Really? Stormer HL
520 - 526	Generic device abstractions for information processing technologies Cavin RK, Zhirnov VV
527 - 535	Pushing CMOS beyond the roadmap Risch L
536 - 544	Nanotechnology: Role in emerging nanoelectronics Yu B, Meyyappan M
545 - 550	Advanced memory concepts for DRAM and nonvolatile memories Horiguchi F
551 - 557	BioMEMS for medicine: On-chip cell characterization and implantable microelectrodes Cheung KC, Renaud P
558 - 565	Lateral coupling and immunity to substrate effect in Omega FET devices Ritzenthaler R, Cristoloveanu S, Faynot O, Jahan C, Kuriyama A, Brevard L, Deleonibus S
566 - 572	Performance and physics of sub-50 nm strained Si on Si1-xGex-on-insulator (SGOI) nMOSFETs Andrieu F, Ernst T, Faynot O, Rozeau O, Bogumilowicz Y, Hartmann JM, Brevard L, Toffoli A, Lafond D, Ghyselen B, Fournel F, Ghibaudo G, Deleonibus S
573 - 578	65 nm LP/GP mix low cost platform for multi-media wireless and consumer applications Tavel B, Duriez B, Gwoziecki R, Basso MT, Julien C, Ortolland C, Laplanche Y, Fox R, Sabouret E, Detcheverry C, Boeuf F, Morin P, Barge D, Bidaud M, Bienacel J, Garnier P, Cooper K, Chapon JD, Trouiller Y, Belledent J, Broekaart M, Gouraud P, Denais M, Huard V, Rochereau K, Difrenza R, Planes N, Marin M, Boret S, Gloria D, Vanbergue S, Abramowitz P, Vishnubhotla L, Reber D, Stolk P, Woo M, Arnaud F
579 - 586	A robust 45 nm gate-length CMOSFET for 90 nm Hi-speed technology Lim KY, Chan V, Rengarajan R, Lee HK, Rovedo N, Lim EH, Yang S, Jamin F, Nguyen P, Lin W, Lai CW, Teh YW, Lee J, Kim L, Luo Z, Ng H, Sudijono J, Wann C, Yang I
587 - 593	Minimization of specific contact resistance in multiple gate NFETs by selective epitaxial growth of Si in the HDD regions Dixit A, Anil KG, Rooyackers R, Leys F, Kaiser M, Collaert N, De Meyer K, Jurczak M, Biesemans S
594 - 600	Impact of dopant segregation on fully depleted Schottky-barrier SOI-MOSFETs Zhang M, Knoch J, Zhao QT, Breuer U, Mantl S
601 - 605	Organic CuTCNQ non-volatile memories for integration in the CMOS backend-of-line: Preparation from gas/solid reaction and downscaling to an area of 0.25 mu m(2) Muller R, Jonge S, Myny K, Wouters DJ, Genoe J, Heremans P
606 - 612	A SrRuO3/IrO2 top electrode FeRAM with CuBEOL process for embedded memory of 130 nm generation and beyond Kumura Y, Ozaki T, Kanaya H, Hidaka O, Shimojo Y, Shuto S, Yamada Y, Tomioka K, Yamakawa K, Yamazaki S, Takashima D, Miyakawa T, Shiratake S, Ohtsuki S, Kunishima I, Nitayama A
613 - 619	Method of activation energy analysis and application to individual cells of 256Mb DRAM in 110 nm technology Weber A, Birner A, Krautschneider W
620 - 625	A new CMP-less integration approach for highly scaled totally silicided (TOSI) gate bulk transistors based on the use of selective S/D Si epitaxy and ultra-low gates Muller M, Mondot A, Aime D, Froment B, Talbot A, Roux JM, Ribes G, Morand Y, Descombes S, Gouraud P, Leverd F, Pokrant S, Toffoli A, Skotnicki T
626 - 631	On the mobility in high-kappa/metal gate MOSFETs: Evaluation of the high-kappa phonon scattering impact Weber O, Casse M, Thevenod L, Ducroquet F, Ernst T, Deleonibus S
632 - 636	Electron mobility in quasi-ballistic Si MOSFETs Lusakowski J, Knap W, Meziani Y, Cesso JP, El Fatimy A, Tauk R, Dyakonova N, Ghibaudo G, Boeuf F, Skotnicki T
637 - 643	Differential magnetoresistance technique for mobility extraction in ultra-short channel FDSOI transistors Chaisantikulwat W, Mouis M, Ghibaudo G, Gallon C, Fenouillet-Beranger C, Maude DK, Skotnicki T, CristoloveanU S
644 - 649	Low temperature characterization of effective mobility in uniaxiallyand biaxially strained nMOSFETs Lime F, Andrieu F, Derix J, Ghibaudo G, Boeuf F, Skotnicki T
650 - 659	Wavelet-based adaptive mesh generation for device simulation De Marchi L, Franze F, Baravelli E, Speciale N
660 - 667	Sub-25 nm UTB SOISRAM cell under the influence of discrete random dopants Samsudin K, Cheng B, Brown AR, Roy S, Asenov A
668 - 673	A physics-based low frequency noise model for MOSFETs under periodic large signal excitation Brederlow R, Koh J, Thewes R
674 - 679	Do hot electrons cause excess noise? Jungemann C, Meinerzhagen B
680 - 686	Quantum short-channel compact modelling of drain-current in double-gate MOSFET Munteanu D, Autran JL, Loussier X, Harrison S, Cerutti R, Skotnicki T
687 - 693	A closed-form charge-based expression for drain current in symmetric and asymmetric double gate MOSFET Roy AS, Sallese JM, Enz CC
694 - 700	A semiempirical surface scattering model for quantum corrected full-band Monte-Carlo simulation of biaxially strained Si/SiGe NMOSFETs Pham AT, Nguyen CD, Jungemann C, Meinerzhagen B
701 - 708	Calculations of hole mass in [110]-uniaxially strained silicon for the stress-engineering of p-MOS transistors Guillaume T, Mouis M
709 - 715	Quantum-mechanical analysis of the electrostatics in silicon-nanowire and carbon-nanotube FETs Gnani E, Marchi A, Reggiani S, Rudan M, Baccarani G
716 - 721	Influence of band structure on electron ballistic transport in silicon nanowire MOSFET's: An atomistic study Nehari K, Cavassilas N, Autran JL, Bescond M, Munteanu D, Lannoo M