Solid-State Electronics

Solid-State Electronics, Vol.45, No.5 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (23 articles)

633 - 634	A word from the new Editor Cristoloveanu S
635 - 638	Properties of GaAs MOSFET with gate dielectric grown by liquid-phase selective oxidation method Wu JY, Sze PW, Deng YM, Huang GW, Wang YH, Houng MP
639 - 644	Electrical and gas-sensing properties of WO3 semiconductor material Wang YD, Chen ZX, Li YF, Zhou ZL, Wu XH
645 - 653	The effect of different transport models in simulation of high frequency 4H-SiC and 6H-SiC vertical MESFETs Bertilsson K, Nilsson HE, Hjelm M, Petersson CS, Kackell P, Persson C
655 - 661	The effects of channel boron-doping on the performance and hot electron reliability of N-channel trend UMOSFETs Suliman SA, Awadelkarim OO, Fonash SJ, Dolny GM, Hao J, Ridley RS, Knoedler CM
663 - 667	A simple procedure to extract the threshold voltage of amorphous thin film MOSFETs in the saturation region Ortiz-Conde A, Cerdeira A, Estrada M, Sanchez FJG, Quintero R
669 - 676	Estimation of hole mobility in strained Si1-xGex buried channel heterostructure PMOSFET Kar GS, Ray SK, Kim T, Banerjee SK, Chakrabarti NB
677 - 682	Calculation of minimum noise figure using the simple Fukui equation for gallium nitride (GaN) HEMTs Oxley CH
683 - 688	Study of the leakage drain current carriers in silicon-on-insulator MOSFETs at high temperatures Bellodi M, Martino JA
689 - 696	Silicon controlled recitfiers type electrostatic discharge protection circuits with variable holding voltage Jang SL, Li SH, Lin LS
697 - 702	Band gap narrowing in strained Si1-xGex base on (001) Si substrate Jin HY, Zhang LC
703 - 709	A general-purpose software for optical characterization of thin films: specific features for microelectronic applications Bosch S, Ferre-Borrull J, Sancho-Parramon J
711 - 715	Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy Huang D, Yun F, Reshchikov MA, Wang D, Morkoc H, Rode DL, Farina LA, Kurdak C, Tsen KT, Park SS, Lee KY
717 - 720	Low-resistance Ni/Au ohmic contact to Mg-doped of Al0.15Ga0.85N/GaN superlattices Kuo CH, Sheu JK, Chi GC, Huang YL, Yeh TW
721 - 725	Vertical AlGaAs/GaAs heterojunction bipolar transistors with 106 V breakdown Baca AG, Chang PC, Klem JF, Ashby CIH, Martin DC
727 - 734	Analysis of reliability of AlGaAs/GaAs HBTs based on device simulation Tan Y, Liou JJ, Gessner J, Schwierz F
735 - 741	Dielectric loss and related noise of pyroelectric modified lead titanate arrays Leonov VN, Butler DP, Celik-Butler Z, Udayakumar KR, Hanson CM, Beratan HR
743 - 749	Characterization of MOSFETs fabricated on large-grain polysilicon on insulator Jagar S, Chan MS, Wang HM, Poon VMC, Myasnikov AM
751 - 754	The keys to get high transconductance of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs devices Cao X, Zeng YP, Kong MY, Pan L, Wang BQ, Zhu ZP
755 - 760	A study into the broadening of the quantized inversion layer states in deep submicron MOSFETs Rahman A, Haque A
761 - 765	Impact-ionization-induced avalanche multiplication effect and Early effect in the selectively implanted collector n-p-n bipolar junction transistors Su AYK, Gong J
767 - 771	Simulation of electron storage in Ge/Si hetero-nanocrystal memory Yang HG, Shi Y, Bu HM, Wu J, Zhao B, Yuan XL, Shen B, Han P, Zhang R, Zheng YD
773 - 776	Numerical analysis for the effects of SiO2/Si interface roughness on quantum oscillations in ultrathin MOSFETs Mao LF, Tan CH, Xu MZ