Solid-State Electronics

Solid-State Electronics, Vol.46, No.5 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (26 articles)

605 - 613	A review of SiC static induction transistor development for high-frequency power amplifiers Sung YM, Casady JB, Dufrene JB, Agarwal AK
615 - 619	Extraction of Schottky diode parameters including parallel conductance using a vertical optimization method Ferhat-Hamida A, Ouennoughi Z, Hoffmann A, Weiss R
621 - 630	An accurate charge control model for spontaneous and piezoelectric polarization dependent two-dimensional electron gas sheet charge density of lattice-mismatched AlGaN/GaN HEMTs Rashmi, Kranti A, Haldar S, Gupta RS
631 - 638	Scaling of pseudomorphic high electron mobility transistors to decanano dimensions Kalna K, Roy S, Asenov A, Elgaid K, Thayne I
639 - 643	Field programmable spin-logic realized with tunnelling-magneto resistance devices Richter R, Boeve H, Bar L, Bangert J, Rupp G, Reiss G, Wecker J
645 - 650	A model for exciton formation in organic electroluminescent devices Kwok HL, Xu JB
651 - 654	Reduction of dark current in an n-type In0.3Ga0.7As/GaAs quantum well infrared photodetector by using a camel diode structure Park J, Jo SJ, Hong S, Song JI
655 - 659	Electric field effects associated with the backside Ge profile in SiGeHBTs Zhang G, Cressler JD, Lanzerotti L, Johnson R, Jin ZR, Zhang SM, Niu GF, Joseph A
661 - 664	Bulk-limited conduction of Ge-implanted thermally grown SiO2 layers Zhao J, Rebohle L, Gebel T, von Borany J, Skorupa W
665 - 673	The influence of geometric structure on the hot-carrier-effect immunity for deep-sub-micron grooved gate PMOSFET Ren HX, Hao Y
675 - 683	The effects of scaling on the performance of small-signal MOS amplifiers Fiegna C
685 - 688	Optimization of gas flow and etch depth uniformity for plasma etching of large area GaAs wafers Lee JW, Jung PG, Devre M, Westermann R, Pearton SJ
689 - 693	Morphological study of the Al-Ti ohmic contact to p-type SiC Mohney SE, Hull BA, Lin JY, Crofton J
695 - 698	Fabrication of AlGaN/GaN heterostructure field effect transistor using room-temperature ohmic contact Jeon CM, Jang HW, Choi KJ, Bae SB, Lee JH, Lee JL
699 - 704	Finite difference analysis of thermal characteristics of CW operation 850 nm lateral current injection and implant-apertured VCSEL with flip-chip bond design Mehandru R, Dang G, Kim S, Ren F, Hobson WS, Lopata J, Pearton SJ, Chang W, Shen H
705 - 710	Effect of plasma enhanced chemical vapor deposition of SiNx on n-GaN Schottky rectifiers Luo B, Johnson JW, Ren F, Baik KW, Pearton SJ
711 - 714	Transient response of highly doped thin channel GaN metal-semiconductor and metal-oxide-semiconductor field effect transistors Pala N, Rumyantsev SL, Shur MS, Hu X, Tarakji A, Gaska R, Khan MA, Simin G, Yang J
715 - 719	Study on ZnSnO3 sensitive material based on combustible gases Wu XH, Wang YD, Tian ZH, Liu HL, Zhou ZL, Li YF
721 - 734	Substrate-triggered ESD clamp devices for use in power-rail ESD clamp circuits Ker MD, Chen TY, Wu CY
735 - 742	Analysis of the diode characteristics using the thermodynamic theories Maa YJ, Abdel-Motaleb IM
743 - 746	DC and microwave performance of recessed-gate GaN MESFETs using ICP-RIE Lee C, Lu W, Piner E, Adesida I
747 - 751	Device simulation of surface quantization effect on MOSFETs with simplified density-gradient method Matsuzawa K, Takagi S, Takayanagi M, Tanimoto H
753 - 757	Current-voltage characteristics of an integrated Schottky diode Tarplee M, Madangarli V, Sudarshan TS
759 - 767	A macro model of silicon spiral inductor Su CY, Chen LP, Chang SJ, Tseng BM, Lin DC, Huang GW, Ho YP, Lee HY, Kuan JF, Wen WY, Liou P, Chen CL, Leu LY, Wen KA, Chang CY
769 - 772	De-embedding length-dependent edge-leakage current in shallow trench isolation submicron MOSFETs Zhou X, Lim KY
773 - 775	Development of advanced plasma process with an optical emission spectroscopy-based end-point technique for etching of AlGaAs over GaAs in manufacture of heterojunction bipolar transistors Lee JW, Jeon MH, Cho GS, Yim HC, Chang SK, Kim KK, Devre M, Johnson D, Sasserath JN, Pearton SJ