Solid-State Electronics

Solid-State Electronics, Vol.47, No.5 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (30 articles)

763 - 768	A self-consistent model for small-signal parameters and noise performance of InAlAs/InGaAs/InAlAs/InP HEMTs Liu KW, Anwar AFM
769 - 774	Current spreading in contact layers and model for 2D numerical calculation of resonant-tunneling diode Biryulin PI, Gorbatsevich AA, Tsibizov AG
775 - 783	A model of radiation effects in nitride-oxide films for power MOSFET applications Raparla VAK, Lee SC, Schrimpf RD, Fleetwood DM, Galloway KF
785 - 789	An enhanced compact waffle MOSFET with low drain capacitance from a standard submicron CMOS technology Lam S, Mok PKT, Ki WH, Ko PK, Chan MS
791 - 796	Topology investigation for the low frequency noise compact modelling of bipolar transistors Borgarino M
797 - 800	Harmonic and intermodulation distortion in SOIFD transistors Abuelma'atti MT
801 - 805	Capacitance-voltage measurements on ultrathin gate dielectrics Norton DP
807 - 810	An analysis of the effect of carrier transport parameters on organic thin films and their luminescent properties Kwok HL, Wu YL, Sun TP, Chang IT
811 - 814	Fabrication and characteristics of polymeric thin-film capacitor Liu YX, Cui TH, Varahramyan K
815 - 819	A nonlocal channel thermal noise model for nMOSFETs Teng HF, Jang SL
821 - 826	Microwave power SiC MESFETs and GaNHEMTs Zhang AP, Rowland LB, Kaminsky EB, Kretchmer JW, Beaupre RA, Garrett JL, Tucker JB, Edward BJ, Foppes J, Allen AF
827 - 830	Novel nitrogen monoxides (NO) gas sensors integrated with tungsten trioxide (WO3)/pin structure for room temperature operation Ho JJ
831 - 834	Investigation of degradation mechanism of Schottky diodes Lee HY, Lee CT
835 - 839	Modeling of clustering reaction and diffusion of boron in strained Si1-xGex epitaxial layers Rajendran K, Villaneuva D, Moens P, Schoenmaker W
841 - 847	All-polymer RC filter circuits fabricated with inkjet printing technology Chen B, Cui TH, Liu Y, Varahramyan K
849 - 853	InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and ITO p-type contacts Lin YC, Chang SJ, Su YK, Tsai TY, Chang CS, Shei SC, Kuo CW, Chen SC
855 - 864	Nonvolatile memory disturbs due to gate and junction leakage currents Park JE, Shields J, Schroder DK
865 - 871	Using diode-stacked NMOS as high voltage tolerant ESD protection device for analog applications in deep submicron CMOS technologies Chen CH, Fang YK, Wang WD, Tsai CC, Tu S, Chen MKL, Chang MC
873 - 878	Visible-blind GaN p-i-n photodiodes with an Al0.12Ga0.88N/GaN superlattice structure Yeh LS, Lee ML, Sheu JK, Chen MG, Kao CJ, Chi GC, Chang SJ, Su YK
879 - 883	Nitride-based multiquantum well p-n junction photodiodes Su YK, Chang SJ, Chiou YZ, Tsai TY, Gong J, Lin YC, Liu SH, Chang CS
885 - 891	Characterization of SONOS oxynitride nonvolatile semiconductor memory devices Wrazien SJ, Zhao YJ, Krayer JD, White MH
893 - 897	Minority carrier lifetime and diffusion length in Si1-x-yGexCy heterolayers Samanta SK, Maikap S, Chatterjee S, Maiti CK
899 - 905	Electrical properties of the gate oxide and its interface with Si in U-shaped trench MOS capacitors: The impact of polycrystalline Si doping and oxide composition Suliman SA, Venkataraman B, Wu CT, Ridley RS, Dolny GM, Awadelkarim OO, Fonash SJ, Ruzyllo J
907 - 912	A modified scalable large-signal rf model for quasi-enhancement-mode AlGaAs/InGaAs pHEMTs Wang CW, Lin CK, Yang SC, Chan YJ, Gan TH
913 - 917	Matrix representation of shot noise due to carrier generation in planar double Schottky-barrier structures Khunkhao S, Masui T, Sato K
919 - 922	Investigation of the electrical degradation of a metal-oxide-silicon capacitor by scanning thermal microscopy Gomes S, Ziane D
923 - 925	Zn doping into InP induced by Nd : YAG continuous wave laser Tian HT, Cai ZH, Chen C, Zhou HG, Kashkarov PK, Markevich MI
927 - 929	Improving turn on voltage and driving voltage of organic electroluminescent devices with nitrogen doped electron transporter Lee WJ, Fang YK, Chiang HC, Ting SF, Chen SF, Chang WR, Lin CY, Lin TY, Wang WD, Hou SC, Ho JJ
931 - 935	Impact of aluminum concentration and magnesium doping on the effect of electron injection in p-AlxGa1-xN Burdett W, Osinsky A, Kotlyarov V, Chow P, Dabiran A, Chernyak L
937 - 941	Subthreshold slope degradation model for localized-charge-trapping based non-volatile memory devices Shappir A, Shacham-Diamand Y, Lucky E, Bloom I, Eitan B