| 469 - 472 |
Variable range hopping conductivity and negative magnetoresistance in n-type InP semiconductor
Abdia R, El Kaaouachi A, Nafidi A, Biskupski G, Hemine J |
| 473 - 477 |
Effects of electrodes on the properties of sol-gel PZT based capacitors in FeRAM
Zhang MM, Jia Z, Ren TL |
| 478 - 482 |
Current conduction models in the high temperature single-electron transistor
Dubuc C, Beaumont A, Beauvais J, Drouin D |
| 483 - 489 |
Parasitic electrostatic capacitance of high-speed SiGe Heterojunction Bipolar Transistors
Zerounian N, Aniel F, Barbalat B, Chevalier P, Chantre A |
| 490 - 496 |
A new compact subthreshold behavior model for dual-material surrounding gate (DMSG) MOSFETs
Chiang TK |
| 497 - 503 |
Effect of strain on the performance of MOSFET-like and p-i-n carbon nanotube FETs
Nia IH, Sheikhi MH |
| 504 - 513 |
Continuous model for independent double gate MOSFET
Reyboz M, Martin P, Poiroux T, Rozeau O |
| 514 - 519 |
Analytical model of short-channel gate enclosed transistors using Green functions
Lopez P, Hauer J, Blanco-Filgueira B, Cabello D |
| 520 - 525 |
Small-signal modeling of MOSFET cascode with merged diffusion
Yun Y, Jhon HS, Jeon J, Lee J, Shin H |
| 526 - 529 |
Laser lift-off transfer of AlGaN/GaN HEMTs from sapphire onto Si: A thermal perspective
Ji HF, Das J, Germain M, Kuball M |
| 530 - 539 |
Capacitance and conductance characteristics of silicon nanocrystal metal-insulator-semiconductor devices
Flynn C, Konig D, Perez-Wurfl I, Conibeer G, Green MA |
| 540 - 547 |
Analytical models of front- and back-gate potential distribution and threshold voltage for recessed source/drain UTB SOI MOSFETs
Svilicic B, Jovanovic V, Suligoj T |
| 548 - 556 |
Symmetric linearization method for double-gate and surrounding-gate MOSFET models
Dessai G, Dey A, Gildenblat G, Smit GDJ |
| 557 - 561 |
Improvement of operational stability in SET states of phase-change-type nonvolatile memory devices using Sb-rich phase of Ge-Sb-Te alloys
Yoon SM, Lee SY, Jung SW, Park YS, Yu BG |
