Solid-State Electronics

Solid-State Electronics, Vol.45, No.7 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (23 articles)

1055 - 1058	A segmented anode, npn controlled lateral insulated gate bipolar transistor Hardikar S, Xu YZ, De Souza MM, Narayanan EMS
1059 - 1065	Deep level investigation in AlGaAs/InGaAs/GaAs cryoelectronic MODFET Dermoul I, Chekir F, Ben Salem M, Kalboussi A, Maaref H
1067 - 1069	On theory of 1/f noise in semiconductors Borovitskaya E, Shur MS
1071 - 1076	Epitaxial layer sheet resistance outside and under ohmic contacts measurements using electrostatic force microscopy Bresse JF, Blayac S
1077 - 1080	New procedure for the extraction of basic a-Si : H TFT model parameters in the linear and saturation regions Cerdeira A, Estrada M, Garcia R, Ortiz-Conde A, Sanchez FJG
1081 - 1084	Numerical analysis for the effects of interface roughness on the attenuation amplitudes of Fowler-Nordheim tunneling current oscillations in ultrathin MOSFETs Mao LF, Zhang HQ, Wei JL, Mu FC, Tan CH, Xu MZ
1085 - 1089	SiC planar MOS-Schottky diode: a high voltage Schottky diode with low leakage current Zhang Q, Madangarli V, Sudarshan TS
1091 - 1097	Dynamic triggering characteristics of SCR-type electrostatic discharge protection circuits Jang SL, Lin LS, Li SH, Chen HM
1099 - 1105	Gate-length dependence of negative differential resistance in ridge-type InGaAs/InAlAs quantum wire field-effect transistor Kim SJ, Sugaya T, Ogura M, Sugiyama Y
1107 - 1113	A novel experimental technique: combined gated-diode method for extracting lateral distribution of interface traps in SOI NMOSFETs He J, Zhang X, Huang A, Huang R
1115 - 1119	Effect of temperature dependence of band gap and device constant on I-V characteristics of junction diode Acharya YB
1121 - 1125	Spontaneous oscillations and triggered pulsing in GaAs/InGaAs multiquantum well structures Perera AGU, Matsik SG, Letov VY, Liu HC, Gao M, Buchanan M, Schaff WJ
1127 - 1135	Electrical characterization of ultrathin oxides of silicon grown by wet oxidation at 800 degrees C Bhat VK, Bhat KN, Subrahmanyam A
1137 - 1148	Transient 3D heat flow analysis for integrated circuit devices using the transmission line matrix method on a quad tree mesh Smy T, Walkey D, Dew SK
1149 - 1152	Study of radiation induced resistance mechanisms in GaAs MESFET and TLM structures Luo B, Johnson JW, Schoenfeld D, Pearton SJ, Ren F
1153 - 1157	Photoluminescence of rapid-thermal annealed Mg-doped GaN films Wang LS, Fong WK, Surya C, Cheah KW, Zheng WH, Wang ZG
1159 - 1163	Characteristics of LiNbO3 memory capacitors fabricated using a low thermal budget process Lim DG, Jang BS, Moon SI, Won CY, Yi J
1165 - 1172	Three-dimensional simulation of discrete oxide charge effects in 0.1 mu m MOSFETs Ryou CR, Hwang SW, Shin H, Lee CH, Park YJ, Min HS
1173 - 1177	Epitaxial GaN films grown on Si(111) with varied buffer layers Liaw HM, Venugopal R, Wan J, Melloch MR
1179 - 1182	Optoelectronic switch performance in double heterostructure-emitter bipolar transistor Guo DF
1183 - 1187	Rapid evaluation degradation activation energy of n-GaAs ohmic contacts with and without TiN diffusion barrier layers Zhang WR, Li ZG, Mu FC, Sun YH, Cheng YH, Chen JX, Shen GD
1189 - 1197	Quantum mechanics prescriptions for compound-semiconductor transistor technologies Anholt R
1199 - 1203	Strained Si/SiGe quantum well MODFETs for cryogenic circuit applications Rack MJ, Thornton TJ, Ferry DK, Huffman J, Westhoff R