Solid-State Electronics

Solid-State Electronics, Vol.47, No.8 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (23 articles)

1249 - 1253	Effects of first rapid thermal annealing temperature on Co silicide formation Peng HJ, Shen ZX, Lim EH, Lai CW, Liu R, Wee ATS, Sameer A, Dai JY, Zhang BC, Zheng JZ
1255 - 1263	Avalanche transistor operation at extreme currents: physical reasons for low residual voltages Vainshtein SN, Yuferev VS, Kostamovaara JT
1265 - 1273	Simulation of nonequilibrium thermal effects in power LDMOS transistors Raman A, Walker DG, Fisher TS
1275 - 1282	A two-dimensional physically-based current model for deep-submicrometer SOI dynamic threshold-voltage MOSFET Huang R, Zhang X, Han RQ, Wang YY
1283 - 1287	A simple quantum model for the MOS structure in accumulation mode Vexler MI
1289 - 1295	Impact of virtual substrate quality on performance enhancements in strained Si/SiGe heterojunction n-channel MOSFETs Olsen SH, O'Neill AG, Norris DJ, Cullis AG, Fobelets K, Kemhadjian HA
1297 - 1309	Two-dimensional hydrodynamic model including inertia effects in carrier momentum for power millimetre-wave semi-conductor devices Rousseau M, Delemer JD, De Jaeger JC, Dessenne F
1311 - 1333	Si film electrical characterization in SOI substrates by the HgFET technique Hovel HJ
1335 - 1338	Zinc-blende ZnS under pressure: predicted electronic properties Benmakhlouf F, Bechiri A, Bouarissa N
1339 - 1343	GaInP/GaAs heterojunction bipolar transistor with carbon-doped base layer grown by solid source molecular beam epitaxy using carbon tetrabromide Zhang R, Yoon SF, Tan KH, Sun ZZ, Huang QF, Jiang J, Lee LH
1345 - 1350	High temperature thermal stability of Au/Ti/WSix Schottky contacts on n-type 4H-SiC Kim J, Ren F, Baca AG, Briggs RD, Pearton SJ
1351 - 1358	New procedure for the extraction of a-Si : H TFTs model parameters in the subthreshold region Resendiz L, Estrada M, Cerdeira A
1359 - 1362	Effect of post oxidation annealing on VCSEL performance Das NC, Newman P
1363 - 1367	Influence of gettering and passivation on uniformity of the electrical parameters in monolithic multicrystalline silicon solar cell Wang H, Yang H, Yu HC, Chen GD
1369 - 1377	Accessing transmission-mode dispersion in super-prisms Du Y, Levi AFJ
1379 - 1383	Monte Carlo analysis of the implant dose sensitivity in 0.1 mu m NMOSFET Srinivasaiah HC, Bhat N
1385 - 1390	Photosensing properties of interdigitated metal-semiconductor-metal structures with undepleted region Masui T, Khunkhao S, Kobayashi K, Niemcharoen S, Supadech S, Sato K
1391 - 1395	Improved reliability for gate dielectric of low-temperature polysilicon thin-film transistors by NO-plasma nitridation Or DCT, Lai PT, Sin JKO, Xu JP
1397 - 1400	Steam-induced interface improvement of N2O-nitrided SiO2 grown on 6H-SiC Xu JP, Lai PT, Chan CL
1401 - 1408	GaN/AlGaN back-illuminated multiple-quantum-well Schottky barrier ultraviolet photodetectors Teke A, Dogan S, Yun F, Reshchikov MA, Le H, Liu XQ, Morkoc H, Zhang SK, Wang WB, Alfano RR
1409 - 1412	Enhanced emission in organic light-emitting diodes using Ta2O5 buffer layers Lu HT, Yokoyama M
1413 - 1415	The characteristics of InGaAs/GaAs modulation-doped photodetectors with two absorption bands Hsieh LZ, Kuei PY
1417 - 1417	Proceedings of the E-MRS 2002 Spring Meeting Symposium M - Preface (vol 47, pg 385, 2003) Chen WM, O'Reilly EP, Forchel A, Tu CW