Solid-State Electronics

Solid-State Electronics, Vol.49, No.8 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (31 articles)

1251 - 1254	Model of the drain current saturation in long-gate JFETs and MESFETs Balucani M, Dobrovolsky VN, Osipov A, Ferrari A
1255 - 1261	A simple current model for edgeless SOI nMOSFET and a 3-D analysis Giacomini R, Martino JA
1262 - 1273	Analytical model for C-V characteristic of fully depleted SOI-MOS capacitors Afzal B, Zahabi A, Amirabadi A, Koolivand Y, Afzali-Kusha A, El Nokali M
1274 - 1281	Impact of halo implantation on 0.13 mu m floating body partially depleted SOI n-MOSFETs in low temperature operation Pavanello MA, Martino JA, Simoen E, Claeys C
1282 - 1291	Modeling and simulation of layer-transferred thin silicon solar cell with quasi monocrystalline porous silicon as active layer Banerjee M, Dutta SK, Gangopadhyay U, Majumdar D, Saha H
1292 - 1296	Effects of self-heating on the microwave performance of SiGeHBTs Sampathkumaran R, Roenker KP
1297 - 1301	Comparison study of ohmic contacts to 4H-silicon carbide in oxidizing ambient for harsh environment gas sensor applications Lee SK, Suh EK, Cho NK, Park HD, Uneus L, Spetz AL
1302 - 1308	Sensors on bipolar magnetotransistors with the base in the well Tikhonov RD
1309 - 1313	A quasi-analytical breakdown voltage model in four-layer punch-through TVS devices Urresti J, Hidalgo S, Flores D, Roig J, Rebollo J, Mazarredo I
1314 - 1319	Carrier transport mechanisms and photovoltaic properties of Au/p-ZnPc/p-Si solar cell El-Nahass MM, Zeyada HM, Aziz MS, El-Ghamaz NA
1320 - 1329	Electron effective mobility in strained-Si/Si1-xGex MOS devices using Monte Carlo simulation Aubry-Fortuna V, Dollfus P, Galdin-Retailleau S
1330 - 1334	AlGaN/GaN Schottky diode hydrogen sensor performance at high temperatures with different catalytic metals Song JH, Lu W, Flynn JS, Brandes GR
1335 - 1340	Effect of surface treatment on electrical properties of AlGaAs/GaAs heterojunction bipolar transistor Baek CH, Oh TK, Kang BK
1341 - 1346	2-D modeling of potential distribution and threshold voltage of short channel fully depleted dual material gate SOI MESFET Hashemi P, Behnam A, Fathi E, Afzali-Kusha A, El Nokali M
1347 - 1351	Nitride-based light emitting diode and photodetector dual function devices with InGaN/GaN multiple quantum well structures Jhou YD, Chen CH, Chuang RW, Chang SJ, Su YK, Chang PC, Chen PC, Hung H, Wang SM, Yu CL
1352 - 1360	Low frequency noise of AlGaN/GaN MODFETs: A comparative study of surface, barrier and heterointerface effects Valizadeh P, Pavlidis D, Shiojima K, Makimura T, Shigekawa N
1361 - 1369	Full direct low frequency noise characterization of GaAs heterojunction bipolar transistors Borgarino M
1370 - 1375	Breakdown and hot carrier injection in deep trench isolation structures Elattari B, Coppens P, Van den Bosch G, Moens P, Groeseneken G
1376 - 1380	Low frequency noise model in N-MOS transistors operating from sub-threshold to above-threshold regions Cordier C, Boukhenoufa A, Pichon L, Michaud JF
1381 - 1386	Investigation of indium-tin-oxide ohmic contact to p-GaN and its application to high-brightness GaN-based light-emitting diodes Chang KM, Chu JY, Cheng CC
1387 - 1390	Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates Wang XL, Wang CM, Hu GX, Wang JX, Chen TS, Jiao G, Li JP, Zeng YP, Li JM
1391 - 1395	A low insertion loss switch using ordering InGaP/AlGaAs/InGaAs pHEMT technology Chiu HC, Chiang YC, Wu CS
1396 - 1404	Design and analysis of a single HBT-based optical receiver front-end Chakrabarti P, Kalra P, Agrawal S, Gupta G, Menon N
1405 - 1409	Compact modeling of transient substrate current of MOSFET Lee WK, Ng AFL, Tang JJ, Chan M
1410 - 1413	Low-resistivity ZrNx metal gate in MOS devices Westlinder J, Malmstrom J, Sjoblom G, Olsson J
1414 - 1421	Simulation of InSb devices using drift-diffusion equations Sijercic E, Mueller K, Pejcinovic B
1422 - 1427	High emissive power MWIR LED array Das NC, Olver K, Towner F
1428 - 1434	Self-homodyne RF-optical LiNbO3 microdisk receiver Hossein-Zadeh M, Levi AFJ
1435 - 1445	Nanoscale FinFET simulation: A quasi-3D quantum mechanical model using NEGF Shao X, Yu ZP
1446 - 1448	The bias dependence of the non-radiative recombination current in p-n diodes Grundmann M
1449 - 1451	Correlation between low frequency phase and amplitude fluctuations in transmission line model of a bipolar transistor and the noise reduction method Takagi K